Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsShigehiko Saida, Yoshitaka Tsunashima
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Abstract
A semiconductor device comprises a semiconductor substrate and a silicon nitride film formed on the semiconductor substrate. The silicon nitride film is substantially free from an Si—H bond and has an Si—H density per unit area of 1×1015 cm−2 or less.
Claims20
A method of manufacturing a semiconductor device having a capacitor, a capacitor insulating film thereof being a silicon nitride film, comprising the steps of:
- forming a silicon oxide film on a substrate;
- converting the silicon oxide film into a nitrided silicon oxide film;
- loading the substrate with the nitrided silicon oxide film in a low pressure CVD apparatus;
- and
- forming, on the nitrided silicon oxide film, the silicon nitride film having a thickness not more than 8 nm and substantially free from an Si—H bond by introducing a predetermined silicon source gas into the low pressure CVD apparatus.
A method of manufacturing a semiconductor device comprising:
- a step of loading a semiconductor substrate into a chamber;
- a first step of introducing a silicon-containing gas into a chamber;
- a second step of performing a first annealing of the semiconductor substrate in the silicon-containing gas at a temperature within 600 to 900° C. and a pressure within 0.1 Torr to 10 Torr;
- a third step of exhausting the silicon-containing gas after the first annealing;
- a fourth step of introducing a nitrogen-containing gas after the third step;
- a fifth step of performing a second annealing of the semiconductor substrate in the nitrogen-containing gas at a temperature within 600 to 1000° C. and a pressure within 0.5 Torr to 100 Torr;
- a sixth step of exhausting the nitrogen-containing gas after the fifth step;
- and
- a step of repeating the first to sixth steps a plurality of times.
A method of manufacturing a semiconductor device having a MOSFET, a gate insulating film thereof being a silicon nitride film, comprising the steps of:
- forming a silicon oxide film on a substrate;
- converting the silicon oxide film into a nitrided silicon oxide film;
- loading the substrate with the nitrided silicon oxide film in a low pressure CVD apparatus;
- and
- forming, on the nitrided silicon oxide film, the silicon nitride film having a thickness not more than 8 nm and substantially free from an Si—H bond by introducing a predetermined silicon source gas into the low pressure CVD apparatus.
Dependencies are inferred from the claim text.