Wafer level fabrication and assembly of chip scale packages
AssigneeMicron Technology, Inc.
InventorWarren M. Farnworth
Life of this patent
Estimating the term…
Abstract
A method for producing integrated circuit devices comprises the steps of forming and packaging such devices at the wafer scale including forming a plurality of chip circuits with bond pads, adhesively fixing a plate of glass to the active surface of the wafer, slicing the wafer, applying a sealant layer to the backside of the wafer, forming contact holes through the upper glass plate, metallizing the glass plate and singulating the individual chips. Use of etchable glass for the package and palladium for metallization provides an advantageous construction method.
Claims55
A method of making semiconductor devices, said method comprising:
- providing a semiconductor wafer substrate having a first side and a second side, a plurality of semiconductor devices formed on said semiconductor wafer substrate with street areas therebetwecn, each of said plurality of semiconductor devices having at least one circuit formed therein and a plurality of bond pads on a first side thereof, said plurality of bond pads connected to said at least one circuit;
- adhesively securing a first plate of glass to said first side of said semiconductor wafer substrate, said first plate of glass having an exterior surface and a substantially parallel interior surface;
- flattening, planarizing and polishing the exterior surface of said first plate of glass in correlation with the second side of said semiconductor wafer substrate after fixing said first plate of glass to said first side of said semiconductor wafer substrate with adhesive;
- reducing a thickness of said semiconductor wafer substrate by removing a portion of the second side thereof;
- separating said plurality of semiconductor devices by removing substrate material in said street areas, said plurality of semiconductor devices remaining fixed to said first plate of glass;
- applying a sealant material to said second side of said semiconductor wafer substrate;
- forming an array of contact holes extending through said first plate of glass to the plurality of bond pads;
- depositing a metal on said exterior surface of said first plate of glass to form a pattern of conductive leads for connecting said plurality of bond pads to said metallized exterior surface of said first plate of glass;
- and
- singulating said plurality of semiconductor devices by separation thereof in said street areas.
A method of making semiconductor devices, said method comprising:
- providing a semiconductor wafer substrate having a first side and a second side, a plurality of semiconductor devices formed on said semiconductor wafer substrate with street areas therebetween, each of said plurality of semiconductor devices having at least one circuit formed therein and a plurality of bond pads on a first side thereof, said plurality of bond pads connected to said at least one circuit;
- adhesively securing a first plate of glass to said first side of said semiconductor wafer substrate, said first plate of glass having an exterior surface and a substantially parallel interior surface;
- flattening, planarizing and polishing the exterior surface of said first plate of glass in correlation with the second side of said semiconductor wafer substrate after fixing said first plate of glass to said first side of said semiconductor wafer substrate with adhesive;
- reducing a thickness of said semiconductor wafer substrate by removing a portion of the second side thereof;
- separating said plurality of semiconductor devices by removing substrate material in said street areas, said plurality of semiconductor devices remaining fixed to said first plate of glass;
- applying a sealant material to said second side of said semiconductor wafer substrate;
- forming an array of contact holes extending through said first plate of glass to the plurality of bond pads;
- metallizing said exterior surface of said first plate of glass to form a pattern of conductive leads for connecting said plurality of bond pads to said metallized exterior surface of said first plate of glass;
- and
- singulating said plurality of semiconductor devices by separation thereof in said street areas.
A method of making semiconductor devices, said method comprising:
- provriding a semiconductor wafer substrate having a first side and a second side, a plurality of semiconductor devices formed on said semiconductor wafer substrate with street areas therebetween, each of said plurality of semiconductor devices having a circuit formed therein and an array of bond pads on a first side thereof and conductively connected to said circuit;
- forming a first sealing layer of glass on said first side of said semiconductor wafer substrate as a hardenable fluid;
- hardening said first sealing layer of glass;
- planarizing said hardened first sealing layer of glass to be parallel to said second side of said semiconductor wafer substrate;
- reducing a thickness of said semiconductor wafer substrate by removing a portion of the second side thereof;
- separating said plurality of semiconductor devices by removing substrate material in said street areas, said plurality of semiconductor devices remaining fixed to said first sealing layer of glass;
- applying a sealant material to said second side of said semiconductor wafer substrate;
- forming an array of contact holes extending through said first sealing layer of glass to the array of bond pads;
- depositing a metal on an exterior surface of said first sealing layer of glass to form a pattern of conductive leads for connecting said array of bond pads to said metallized exterior surface of said first sealing layer of glass;
- applying an insulative sealant coating over said exterior surface of said first sealing layer of glass at one of prior to and following the depositing said metal;
- and
- singulating said semiconductor devices by separation thereof in said street areas.
Dependencies are inferred from the claim text.