Optical sensor by using tunneling diode
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHo-Yin Yiu, Chein-Ling Jan, Jen-Pan Wang, Lin-June Wu
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Abstract
A method of fabricating a tunneling photodiode is presented comprised of the following steps: forming a p-well in an n-type substrate, forming a thin insulating layer over the surface of the p-type material, and then forming a thin n-type layer over the insulating layer. Preferably, the n and p type semiconductor material could be silicon and the insulating layer could be between about 30 to 40 angstroms of gate quality silicon dioxide. In other embodiments of the invention the materials of either electrode are either n or p-type semiconductors or metals.
Claims37
A method of fabricating a tunnel photodiode comprising:
- providing a substrate and forming a p-type semiconductor layer on said substrate to be the bottom electrode;
- forming an insulating layer on the bottom electrode;
- depositing a conducting layer, whose thickness is less than about the absorption length of light to be detected, to be the top electrode;
- whereby a tunnel photodiode, having an insulating barrier layer disposed between top and bottom electrodes, is formed.
A method of fabricating a tunnel photodiode comprising:
- providing a substrate and forming an n-type semiconductor layer on said substrate to be the bottom electrode;
- forming an insulating layer on the bottom electrode;
- depositing a conducting layer, whose thickness is less than about the absorption length of light to he detected, to be the top electrode;
- whereby a tunnel photodiode, having an insulating barrier layer disposed between top and bottom electrodes, is formed.
A method of fabricating a tunnel photodiode comprising:
- providing a substrate and forming a metal layer on said substrate to be the bottom electrode;
- forming an insulating layer on the bottom electrode;
- depositing a conducting layer, whose thickness is less than about the absorption length of light to be detected, to be the top electrode;
- whereby a tunnel photodiode, having an insulating barrier layer disposed between top and bottom electrodes, is formed.
Dependencies are inferred from the claim text.