Piezoelectric thin film element fabrication method
AssigneeSeiko Epson Corporation
InventorsHiroyuki Kamei, Tsutomu Nishiwaki, Makoto Matsuzaki, Masato Shimada, Akira Matsuzawa
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Abstract
A piezoelectric thin film element is provided that functions well as an actuator, that yields the desired composition, and that exhibits good piezoelectric thin film distortion characteristics. A lower electrode is formed on a substrate, a piezoelectric thin film precursor thin film layer is formed on the lower electrode, this is subjected to patterning, and a heating solution is applied to the substrate to implement hydrothermal processing, thereby selectively crystallizing the precursor thin film layer and yielding a piezoelectric thin film layer.
Claims9
A method of fabricating a piezoelectric thin film element made by forming a lower electrode layer, a piezoelectric thin film layer, and an upper electrode layer on a substrate, comprising:
- forming a piezoelectric precursor thin film layer on said lower electrode;
- forming a mask pattern on said precursor thin film layer;
- and
- applying a heating solution to said substrate for the purpose of hydrothermal processing, thereby selectively crystallizing areas in said precursor thin film layer where said mask pattern is not formed to obtain said piezoelectric thin film layer.
A method of fabricating a piezoelectric thin film element made by forming a lower electrode layer, a piezoelectric thin film layer, and an upper electrode layer on a substrate, comprising:
- laminating a precursor thin film layer on said lower electrode using a precursor sol for forming said precursor that exhibits photosensitivity;
- selectively exposing said precursor thin film layer to light;
- patterning said precursor thin film layer after exposing it to light;
- and
- applying a heating solution to said substrate for the purpose of hydrothermal processing thereby selectively crystallizing said precursor thin film layer.
A method of fabricating a piezoelectric thin film element made by forming a lower electrode layer, a piezoelectric thin film layer, and an upper electrode layer on a substrate, comprising:
- forming a piezoelectric precursor thin film layer on said lower electrode and subjecting said piezoelectric precursor thin film layer to patterning;
- after forming said precursor thin film layer on said lower electrode, forming seeds consisting of an element configuring said piezoelectric thin film or an oxide thereof, or a seed layer containing said seeds, to promote the crystallization of said precursor thereon;
- and
- applying a heating solution to said substrate for the purpose of hydrothermal processing, thereby selectively crystallizing said precursor thin film.
A method of fabricating a piezoelectric thin film element made by forming a lower electrode layer, a piezoelectric thin film layer, and an upper electrode layer on a substrate, comprising:
- forming a plurality of piezoelectric precursor thin film layers and subjecting said piezoelectric precursor thin film layers to patterning, wherein seeds are formed consisting of an element configuring said piezoelectric thin film or an oxide thereof, or a seed layer containing said seeds is formed, to promote the crystallization of said precursor, between said precursor thin film layers;
- and
- applying a heating solution to said substrate for the purpose of hydrothermal processing, thereby selectively crystallizing said precursor thin film layers to obtain said piezoelectric thin film layer.
Dependencies are inferred from the claim text.