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US 6,284,317 B1Granted
Derivatization of silicon surfaces
AssigneeMassachusetts Institute of Technology
InventorsPaul E. Laibinis, Namyong Y. Kim
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AssigneeMassachusetts Institute of Technology
InventorsPaul E. Laibinis, Namyong Y. Kim
Estimating the term…
The present invention relates to methods of derivatizing semiconductor surfaces, particularly porous silicon surfaces with silicon-carbon units. The derivatization occurs through the direct addition of an organometallic reagent in the absence of an external energy source such as heat and photo- or electrochemical energies. The method of the invention allows the formation of unique intermediates including silicon hydride units bonded to metal ions. Because of these unique intermediates, it is possible to form previously inaccessible silicon-carbon units, for example where the carbon atom is an unsaturated carbon atom. Such inaccessible silicon-carbon units also include silicon-polymer covalent bond formation, in particular where the polymer is a conducting polymer. Thus, the present invention also provides a novel semiconductor surface/polymer junction having improved interfacial interactions.
A method comprising:
A method comprising:
An article comprising a surface having at least a portion of the surface comprising a formula SixHy—MXn, M being a metal, wherein H is bonded to Si, X is an anion, x is greater than zero, y is greater than zero and n is at least 0.
An article comprising semiconductor silicon comprising a surface wherein at least a portion of the surface has a silicon-carbon bond and the carbon atom of the silicon-carbon bond is attached to a unit having at least one unsaturated carbon atom.
A method comprising:
A method comprising:
Dependencies are inferred from the claim text.