Method and apparatus for chemical vapor deposition of polysilicon

A method for production of bulk polysilicon by chemical vapor deposition comprising the steps of:

• using a cold wall chemical vapor deposition reactor comprising a quartz envelope attachable to a base plate so as to form a closed quartz enclosure, a process gas inlet and a process gas outlet in said base plate communicating with said enclosure, and outer tube support system on said base plate within said closed quartz enclosure enclosing said gas inlet port and said gas outlet port, and a cover plate,
• vertically emplacing within said enclosure on said tube support system an outer tube,
• capping the upper end of said outer tube with said cover plate so as to form within said enclosure a closed reaction chamber bounded by said base plate and said tube support system and the interior surface of said outer tube and said cover plate,
• applying radiant heat to said closed quartz enclosure sufficient for raising to and maintaining the interior surface of said outer tube at the deposition temperature of a select combination of carrier gas and silicon reactant material,
• flowing said carrier gas ladened with said silicon reactant material through said process gas inlet port into said primary reaction chamber,
• conducting within said closed reaction chamber a CVD process utilizing said combination of carrier gas and silicon reactant material such that a bulk polysilicon layer is deposited upon the interior surface of said outer tube and said cover plate,
• flowing gaseous byproducts of said CVD process out through said process gas outlet port, and
• removing as a bulk polysilicon product from said quartz envelope said outer tube with said bulk polysilicon layer.

A method for production of bulk polysilicon by chemical vapor deposition comprising the steps of:

• using a quartz envelope on a base plate with an inlet port and and outlet port, each said port communication with the interior of said envelope,
• vertically emplacing within said envelope on said base plate an open ended core tube,
• vertically emplacing within said envelope on said base plate an enclosed tubular silicon casing positioned so as to encompass and not contact said core tube and to be communicating with said inlet port and said outlet port,
• raising to and maintaining the interior surface of said casing and said core tube at the deposition temperature of a select combination of carrier gas and silicon reactant material using a heat source comprising a radiant heat source external of said quartz envelope,
• flowing said carrier gas ladened with said silicon reactant material through said inlet port into said enclosure,
• conducting within said tubular casing a CVD process utilizing said combination of carrier gas and silicon reactant material such that a bulk polysilicon layer is deposited upon the interior wall of said tubular casing and upon the interior and exterior walls of said core tube,
• flowing gaseous byproducts of said CVD process out of said enclosure through said outlet port,
• removing as a bulk polysilicon product from said quartz envelope said core tube and tubular casing with said bulk polysilicon layers.

A method for production of bulk polysilicon by chemical vapor deposition comprising the steps of:

• using a cold wall chemical vapor deposition reactor comprising a quartz envelope attachable to a base plate so as to form a closed quartz enclosure, a process gas inlet and a process gas outlet in said base plate communicating with said enclosure, an outer tube support system on said base plate within said closed quartz enclosure enclosing said gas inlet port and said gas outlet port, and a cover plate, said reactor further comprising a core tube support system on said base plate, said core tube support system being of smaller diameter and dcentered within said outer tube support system and ventilated for through flow gas,
• vertically emplacing within said enclosure on said core tube support system a silicon core tube, said core tube being of smaller diameter than said outer tube and open at both ends,
• vertically emplacing within said enclosure on said tube support system an outer tube,
• capping the upper end of said outer tube with said cover plate so as to form within said enclosure a closed reaction chamber bounded by said bas plate and said tube support system and the interior surface of said outer tube and said cover plate,
• applying radiant heat to said closed quartz enclosure sufficient for raising to and maintaining the interior surfaceds of said outer tube and said core tube at the deposition temperature of a select combination of carrier gas and silicon reactant material,
• flowing said carrier gas ladened with said silicon reactant material through said process gas inlet port into said primary reaction chamber,
• conducting within said closed reacton chamber a CVD process utilizing said combination of carrier gas and silicon reactant material such that a bulk polysilicon layer is deposited upon the interior surface of said outer tube and said cover plate,
• flowing the gaseous byproducts of said CVD process out through said process gas outlet port, and
• removing as a bulk polysilicon product from said quartz envelope said outer tube and said core tube with said bulk polysilicon layers.