Etching gas mixture for transition metal thin film and method for etching transition metal thin film using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJin-hong Kim, Seong-ihl Woo
Life of this patent
Estimating the term…
Abstract
An etching gas mixture for a transition metal thin film, and an etching method using the etching gas mixture are provided. The etching gas mixture is composed of two gases. The first gas is one selected from the group consisting of halogen gas, halide gas, halogen gas mixture, halide gas mixture and gas mixture of halogen and halide. The second gas is one selected from the group consisting of carbon oxide gas, hydrocarbon gas, nitrogen oxide gas and nitrogen-containing gas. The etching gas mixture reacts with the transition metal thin film to form a highly volatile metal halide, so that a fine pattern can be formed with a high selectivity.
Claims26
A method for etching a transition metal thin film, comprising the steps of:
- (a) loading a semiconductor substrate having the transition metal thin film in a reaction chamber, wherein the transition metal thin film is a ferroelectric capacitor electrode film selected from the group consisting of Ru, Ir, Rh, Pt, and Ni;
- and
- (b) injecting into the reaction chamber an etching gas mixture comprising a first gas which is one selected from the group consisting of halogen gas, halide gas, halogen gas mixture, halide gas mixture and gas mixture of halogen and halide, and a second gas which is one selected from the group consisting of carbon oxide gas, hydrocarbon gas, and nitrogen-containing gas, to form a volatile metal halide through a reaction between the transition metal thin film and the etching gas mixture, thereby etching the transition metal thin film and converting the film into an organic metal halide, a metal amine halide, or a metal nitrosohalide, wherein the hydrocarbon gas comprises one selected from the group consisting of benzene, cyclopentadiene, toluene, and butadiene.
A method for etching a transition metal thin film comprising the steps of:
- (a) loading a semiconductor substrate having the transition metal thin film into a reaction chamber, the transition metal thin film being a ferroelectric capacitor electrode film selected from the group consisting of Ru, Ir, Rh, Pt, and Ni;
- (b) injecting a first gas which is one selected from the group consisting of halogen gas, halide gas, halogen gas mixture, halide gas mixture, and gas mixture of halogen and halide, to react with the transition metal thin film, thereby forming a metal halide;
- and
- (c) injecting a second gas which is one selected from the group consisting of carbon oxide gas, hydrocarbon gas, and nitrogen-containing gas, to react with the metal halide, thereby forming a volatile metal halide selected from the group consisting of an organic metal halide, a metal amine halide and a metal nitrosohalide, wherein the hydrocarbon gas comprises one selected from the group consisting of benzene, cyclopentadiene, toluene, and butadiene.
Dependencies are inferred from the claim text.