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US 6,284,091 B1Granted
Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control
AssigneeIntel Corporation
InventorLawrence D. Wong
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Abstract
The present invention is an improved apparatus and process for chemical mechanical polishing (CMP) layers which have a low dielectric constant (k). The present invention uses a magnetic slurry and a magnetic coil for polishing the wafer with the magnetic slurry. By using a magnetic slurry and a magnetic coil the force used during polishing can be controlled resulting greater control over the CMP process during the polishing of low k materials.
Claims24
An apparatus comprising:
- a substrate holder;
- a substrate disposed on top of said substrate holder;
- a magnetic slurry disposed on top of said substrate;
- and
- a stage disposed below said substrate holder, said stage comprising a magnetic coil.
2 more elements
An apparatus comprising:
- a wafer holder, said wafer holder having a first side and a second side;
- a magnetic slurry disposed adjacent to said first side of said wafer holder;
- and
- a stage disposed adjacent to said second side of said wafer holder, said stage comprising a magnetic coil.
1 more element
Dependencies are inferred from the claim text.