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US 6,284,055 B1Granted
Method and apparatus for immersion treatment of semiconductor and other devices
AssigneeZ Cap, L.L.C.
InventorsPaul William Dryer, Richard Scott Tirendi, James Bradley Sundin
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Abstract
Method and apparatus for cleaning semiconductor devices and other workpieces using an aqueous rinse solution which is de-oxygenated by passing the aqueous rinse solution and a carrier gas through an osmotic membrane degasifier. A cleaning chamber is also disclosed for carrying out the cleaning method.
Claims20
A method for treating opposed major surfaces of a semiconductor device, comprising:
- providing a treatment chamber defining a cavity for receiving the semiconductor device;
- providing a carrier fluid;
- providing an aqueous solution;
- inserting the semiconductor device into the cavity;
- passing said aqueous solution and said carrier fluid through an osmotic membrane degasifier having a membrane so as to draw oxygen from said aqueous solution through said membrane to said carrier fluid and so as to introduce carrier fluid through said membrane, into said aqueous solution so as to control the pH of said aqueous solution;
- and
- contacting said semiconductor wafer with aqueous solution from said osmotic membrane degasifier.
4 more elements
Dependencies are inferred from the claim text.