Plasma CVD apparatus

A plasma CVD apparatus comprising:

• a reaction chamber constituted by a conductor and maintained in a decompressed state;
• an electrode in said reaction chamber for supplying electric energy into the reaction chamber;
• a substrate holder in said reaction chamber for holding a substrate opposite to the electrode;
• a space between said electrode and said substrate holder;
• at least one electrical insulator in said reaction chamber, said insulator located so as to surround at least sides of said space;
• a gas system for supplying a gas into the reaction chamber;
• and
• an exhaust system for exhausting the reaction chamber,
• wherein plasma generated between said electrode and said substrate holder extends only in said space surrounded by the electrode, the substrate holder, and said insulator, and
• wherein the insulator becomes a stopper for said substrate holder where said substrate holder moves upward.

A plasma CVD apparatus comprising:

• a reaction chamber constituted by a conductor and maintained in a decompressed state;
• an electrode in said reaction chamber for supplying electric energy into the reaction chamber;
• a substrate holder in said reaction chamber for holding a substrate opposite to the electrode;
• at least one electrical insulator in said reaction chamber, said insulator located adjacent to at least side portion of said electrode;
• a gas system for supplying a gas into the reaction chamber;
• and
• an exhaust system for exhausting the reaction chamber,
• wherein said insulator prevents plasma generated between said electrode and said substrate holder from extending to walls of said reaction chamber, and
• wherein the insulator becomes a stopper for said substrate holder where said substrate holder moves upward.

A plasma CVD apparatus comprising:

• a reaction chamber constituted by a conductor and maintained in a decompressed state;
• an upper electrode located upper portion in said reaction chamber, said upper electrode supplying electric energy into the reaction chamber;
• a substrate holder located lower portion in said reaction chamber opposite to the electrode for holding a substrate thereon;
• a space between said electrode and said substrate holder;
• at least one electrical insulator in said reaction chamber, said insulator located surrounding said space;
• a gas system for supplying a gas into the reaction chamber;
• and
• an exhaust system for exhausting the reaction chamber,
• wherein plasma generated between said upper electrode and said substrate holder extends only in said space surrounded by the electrode, the substrate holder, and said insulator,
• wherein said plasma is prevented from extending to walls of the reaction chamber by said substrate holder and said insulator, and
• wherein the insulator becomes a stopper for said substrate holder where said substrate holder moves upward.

An apparatus for fabricating a semiconductor device comprising:

• a plurality of chambers including at least a load chamber, a common chamber, and a reaction chamber, each being constituted by a conductor and being maintained in a decompressed state;
• carrying means for carrying a substrate in and out of the reaction chamber, said carrying means being located in the common chamber,
• wherein said reaction chamber comprises;
• a reaction chamber constituted by a conductor and maintained in a decompressed state;
• an electrode in said reaction chamber for supplying electric energy into the reaction chamber;
• a substrate holder in said reaction chamber for holding a substrate opposite to the electrode;
• a space between said electrode and said substrate holder;
• at least one electrical insulator in said reaction chamber, said insulator located so as to surround at least sides of said space;
• a gas system for supplying a gas into the reaction chamber;
• and
• an exhaust system for exhausting the reaction chamber,
• wherein plasma generated between said electrode and said substrate holder extends only in said space surrounded by the electrode, the substrate holder, and said insulator, and
• wherein the insulator becomes a stopper for said substrate holder where said substrate holder moves upward.