Semiconductor light-emitting device

A semiconductor light-emitting device having a light-output face facing in a first direction, comprising:

• a multi-layer structure defining said light-output face and having a plurality of semiconductor layers including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type stacked on said first semiconductor layer in said first direction to form a pn junction configured to emit light, said second semiconductor layer having a notch which exposes an electrode area of said first semiconductor layer;
• a first main electrode arranged on said electrode area of said first semiconductor layer, and having a first electrode pad which covers a portion of said light-output face and is opaque to the emitted light;
• a second main electrode arranged on said second semiconductor layer, and having a second electrode pad which covers a portion of said light-output face and is opaque to the emitted light, said first and second electrode pads having a total projected area set at 25% or less of that of said light-output face;
• first and second insulating layers arranged on side walls of said multi-layer structure;
• and
• first and second wiring layers arranged on said first and second insulating layers, respectively, and connected to said first and second electrode pads, respectively.