Method of manufacturing a semiconductor and a semiconductor light-emitting device

Abstract

First of all, a semiconductor substrate which consists of SiC is soaked for ten minutes in a buffered hydrofluoric acid, thereby the oxidized film formed on the surface of the semiconductor substrate being etched. Then, TMA, NH3, TMG, and hydrogen for carrier are supplied at the rates of 10 μmol/min., 2.5 L/min., and 2 L/min., respectively to the semiconductor substrate at a temperature of 1090° C. by using MOVPE, thereby a buffer layer which consists of single crystal AlN and has a thickness of 15 nm being grown on the main surface of the semiconductor substrate. After lowering the temperature to 800° C., TMA, TMG, TMI, and NH3are supplied at the rates of 0.2 μmol/min., 2 μmol/min., 20 μmol/min., and 5 L/min., respectively, thereby a single crystal layer which consists of AlGaInN being grown on the buffer layer.

Dependencies are inferred from the claim text.