Layered III-V semiconductor structures and light emitting devices including the structures

A III-V semiconductor alloy structure, said structure comprising:

• first and second monoatomic layers, wherein each of said first and second monoatomic layers includes a group III-V semiconductor alloy containing nitrogen, at least one other group V element, and a group III element, wherein the first and second monoatomic layers are formed by a metal organic chemical vapor deposition (MOCVD) method using an organic metal as a source material for the group-III element and an organic nitrogen compound as a source material for nitrogen, said group III-V semiconductor alloy having a deduced composition of GaxIn1−xNyAs1−y, where 0<x<1 and 0<y<1;
• said second monoatomic layer having a different content of both nitrogen and said group III element as compared with said first monoatomic layer, wherein said first and second monoatomic layers have compositions of Gax1In1−x1Ny1As1−y1, where 0<x1≦1 and 0<y1<1, and Gax2In1−x2Ny2As1−y2, where 0≦x2<1 and 0<y2<1, respectively, and wherein said first monoatomic layer has no or minimal In content and said second monoatomic layer has no Ga content or an In content larger than said first monoatomic layer;
• and
• a superlattice structure formed from the deposition of at least one each of said first and second monoatomic layers in a predetermined order.

A III-V semiconductor alloy structure, said structure comprising:

• first and second monoatomic layers, wherein each of said first and second monoatomic layers includes a group III-V semiconductor alloy containing nitrogen, at least one other group V element, and a group III element, wherein the first and second monoatomic layers are formed by a metal organic chemical vapor deposition (MOCVD) method using an organic metal as a source material for the group-III element and an organic nitrogen compound as a source material for nitrogen, and wherein said group III-V semiconductor alloy has a deduced composition of (AlxGa1−x)yIn1−yNzP1−z, where 0≦x≦1, 0<y<1, and 0<z<1;
• said second monoatomic layer having a different content of both nitrogen and said group III element as compared with said first monoatomic layer, wherein said first and second monoatomic layers have compositions of (AlxGa1−x)y1In1−y1Nz1P1−z1, where 0≦x≦1, 0<y1≦1, and 0<z1<1, and (AlxGa1−x)y2In1−y2Nz2P1−z2, where 0≦x>1, 0≦y2<y1≦1, and 0<z2<1, respectively, and wherein said first monoatomic layer has no or minimal In content and said second monoatomic layer has no Ga or Al content or an In content larger than said first monoatomic layer;
• and
• a superlattice structure formed from the deposition of at least one each of said first and second monoatoniic layers in a predetermined order.

A light emitting semiconductor device, said device comprising:

• an active layer, said active layer further comprising a layered structure of a group III-V semiconductor alloy;
• first and second monoatomic layers within said active layer, wherein each of said first and second monoatomic layers includes a group III-V semiconductor alloy containing nitrogen, at least one other group V element, and a group III element, said second monoatomic layer having a different content of said group III element from said first monoatomic layer, wherein the first and second monoatomic layers are formed by a metal organic chemical vapor deposition (MOCVD) method using an organic metal as a source material for the group-III element and an organic nitrogen compound as a source material for nitrogen;
• and
• a superlattice structure formed from the deposition of said first and second monoatomic layers in a predetermined order.

A light emitting semiconductor device, said device comprising:

• an active layer, said active layer further comprising a layered structure of a group III-V semiconductor alloy;
• first and second monoatomic layers within said active layer, wherein each of said first and second monoatomic layers includes a group III-V semiconductor alloy containing nitrogen, at least one other group V element, and a group III element, wherein the first and second monoatomic layers are formed by a metal organic chemical vapor deposition (MOCVD) method using an organic metal as a source material for the group-III element and an organic nitrogen compound as a source material for nitrogen and wherein said group III-V semiconductor alloy has a deduced composition of
• GaxIn1−xNyAs1−y, where 0<x<1 and 0<y<1,
• said second monoatornic layer having a different content of both nitrogen and said group III element as compared with said first monoatomic layer, wherein said first and second monoatomic layers have compositions of Gax1In1−x1Ny1As1−y1, where 0<x1≦1and 0<y1<1, and Gax2In1−x2Ny2As1−y2. where 0≦x2<1 and 0<y2<1, respectively, and wherein said first monoatomic layer has no or minimal In content and said second monoatomic layer has no Ga content or an In content larger than said first monoatomic layer;
• and
• a superlattice structure formed from the deposition of at least one each of said first and second monoatornic layers in a predetermined order.

A light emitting semiconductor device, said device comprising:

• an active layer, said active layer further comprising a layered structure of a group III-V semiconductor alloy;
• first and second monoatomic layers within said active layer, wherein each of said first and second monoatomic layers includes a group III-V semiconductor alloy containing nitrogen, at least one other group V element, and a group III element, wherein the first and second monoatomic layers are formed by a metal organic chemical vapor deposition (MOCVD) method using an organic metal as a source material for the group-III element and an organic nitrogen compound as a source material for nitrogen and said group III-V semiconductor alloy has a deduced composition of (AlxGa1−x)yIn1−yNzP1−z, |,., where 0≦x≦1, 0<y<1, and 0<z<1,
• said second monoatomic layer having a different content of both nitrogen and said group III element as compared with said first monoatomic layer, wherein said first and second monoatomic layers have compositions of (AlxGa1−x)y1In1−y1Nz1P1−z1, where 0≦x≦1, 0<y1≦1, and 0<z1<1, and (AlxGa1−x)y2In1−y2Nz2P1−z2, where 0≦x≦1, 0≦y2<y1≦1, and 0<z2<1, respectively, and wherein said first monoatomic layer has no or minimal In content and said second monoatomic layer has no Ga or Al content or an In content larger than said first monoatomic layer;
• and
• a superlattice structure formed from the deposition of at least one each of said first and second monoatomic layers in a predetermined order.

A III-V semiconductor alloy structure, said structure comprising:

• first and second monoatomic layers, wherein each of said first and second monoatomic layers includes a group III-V semiconductor alloy containing nitrogen, at least one other group V element, and a group III element, said group III-V semiconductor alloy having a deduced composition of GaxIn1−xNyAs1−y, where 0<x<1 and 0<y<1;
• said second monoatomic layer having a different content of both nitrogen and said group III element as compared with said first monoatomic layer, wherein said first and second monoatomic layers have compositions of Gax1In1−x1Ny1As1−y1, where 0<x1≦1 and 0<y1<1, and Gax2In1−x2Ny2As1−y2, where 0≦x2<1 and 0<y2<1, respectively, and wherein said first monoatomic layer has no or minimal In content and said second monoatomic layer has no Ga content or an In content larger than said first monoatoniic layer, and wherein the In content of a given monoatomic layer is approximately inversely proportional to the nitrogen content of said given monoatomic layer;
• and
• a superlattice structure formed from the deposition of at least one each of said first and second monoatomic layers in a predetermined order.

A III-V semiconductor alloy structure, said structure comprising:

• first and second monoatomic layers, wherein each of said first and second monoatomic layers includes a group III-V semiconductor alloy containing nitrogen, at least one other group V element, and a group III element, and wherein said group III-V semiconductor alloy has a deduced composition of (AlxGa1−x)yIn1−yNzP1−z, where 0≦x≦1, 0<y<1, and 0<z<1;
• said second monoatomic layer having a different content of both nitrogen and said group III element as compared with said first monoatomic layer, wherein said first and second monoatomic layers have compositions of (AlxGa1−x)y1In1−y1Nz1P1−z1, where 0≦x≦1, 0<y1≦1, and 0<z1<1, and (AlxGa1−x)y2In1−y2Nz2P1−z2, where 0≦x≦1, 0≦y2<y1≦1, and 0<z2<1, respectively, and wherein said first monoatomic layer has no or minimal In content and said second monoatomic layer has no Ga or Al content or an In content larger than said first monoatomic layer, and wherein the In content of a given monoatomic layer is approximately inversely proportional to the nitrogen content of said given monoatomic layer;
• and
• a superlattice structure formed from the deposition of at least one each of said first and second monoatomic layers in a predetermined order.

A light emitting semiconductor device, said device comprising:

• an active layer, said active layer further comprising a layered structure of a group III-V semiconductor alloy;
• first and second monoatomic layers within said active layer, wherein each of said first and second monoatomic layers includes a group III-V semiconductor alloy containing nitrogen, at least one other group V element, and a group III element, said second monoatomic layer having a different content of said group III element from said first monoatomic layer, and wherein the In content of a given monoatomic layer is approximately inversely proportional to the nitrogen content of said given monoatomic layer;
• and
• a superlattice structure formed from the deposition of said first and second monoatomic layers in a predetermined order.

A light emitting semiconductor device, said device comprising:

• an active layer, said active layer further comprising a layered structure of a group III-V semiconductor alloy;
• first and second monoatomic layers within said active layer, wherein each of said first and second monoatomic layers includes a group III-V semiconductor alloy containing nitrogen, at least one other group V element, and a group III element, and wherein said group III-V semiconductor alloy has a deduced composition of
• GaxIn1−xNyAs1−y, where 0<x<1 and 0<y<1,
• said second monoatomic layer having a different content of both nitrogen and said group III element as compared with said first monoatomic layer, wherein said first and second monoatomic layers have compositions of Gax1In1−x1Ny1As1−y1, where 0<x1≦1 and 0<y1<−1, and Gax2In1−x2Ny2As1−y2, where 0≦x2<1 and 0≦y2<1, respectively, and wherein said first monoatomic layer has no or minimal In content and said second monoatomic layer has no Ga content or an In content larger than said first monoatomic layer and wherein the In content of a given monoatomic layer is approximately inversely proportional to the nitrogen content of said given monoatomic layer;
• and
• a superlattice structure formed from the deposition of at least one each of said first and second monoatomic layers in a predetermined order.

A light emitting semiconductor device, said device comprising:

• an active layer, said active layer further comprising a layered structure of a group III-V semiconductor alloy;
• first and second monoatomic layers within said active layer, wherein each of said first and second monoatomic layers includes a group III-V semiconductor alloy containing nitrogen, at least one other group V element, and a group III element, and said group III-V semiconductor alloy has a deduced composition of (AlxGa1−x)yIn1−yNzP1−z, where 0≦x≦1 0<y<1, and 0<z<1,
• said second monoatomic layer having a different content of both nitrogen and said group III element as compared with said first monoatomic layer, wherein said first and second monoatoric layers have compositions of (AlxGa1−x)y1Iny1Nz1P1−z1, where 0<x<1, 0<y1<1, and 0<z1<1, and (AlxGa1−x)2In1−y2Nz2P1−z2, where 0<x<1, 0<y2<y1<1, and 0<z2<1, respectively, and wherein said first monoatomic layer has no or minimal In content and said second monoatomic layer has no Ga or Al content or an In content larger than said first monoatomic layer and wherein the In content of a given monoatomic layer is approximately inversely proportional to the nitrogen content of said given monoatomic layer;
• and
• a superlattice structure formed from the deposition of at least one each of said first and second monoatomic layers in a predetermined order.