Method of forming borderless contact
AssigneeUnited Microelectronics Corp.
InventorsMichael W C Huang, Hsueh-Hao Shih, Gwo-Shii Yang, Tri-Rung Yew
Life of this patent
Estimating the term…
Abstract
A method for forming borderless contact is disclosed. The method includes providing a substrate with active areas and a trench isolation region in which the active areas are silcide. Then, the substrate is nitridized such that a titanium nitride layer is formed on the active areas and a silicon oxynitride is formed on the trench isolation region. A dielectric layer is deposited on the substrate and an opening is etched in the dielectric layer in which the opening overlies both a portion of the trench isolation region and a portion of the active area.
Claims17
A method for forming a semiconductor device, said method comprising:
- providing a substrate having active areas and a trench isolation region, wherein said active areas are silicide;
- nitridizing said substrate such that a titanium nitride layer is formed on said active areas and a silicon oxynitride is formed on said trench isolation region;
- forming a dielectric layer on said substrate;
- and
- etching an opening in said dielectric layer, wherein said opening overlies both a portion of said trench isolation region and a portion of said active area.
A method for forming a semiconductor device, the method comprising:
- providing a substrate having active areas and a trench isolation region, wherein said active areas are silicide by using a salicide process;
- applying NH3 gas after the salicide process such that a titanium nitride layer is formed on said active areas and a silicon oxynitride is formed on said trench isolation region;
- forming a dielectric layer on said substrate;
- and
- etching an opening in said dielectric layer, wherein said opening overlies both a portion of said trench isolation region and a portion of said active area.
A method for forming a semiconductor device, said method comprising:
- providing a substrate having active areas and a trench isolation region;
- in-situ applying NH3 gas at rapid thermal process 2 of salicide process such that a titanium nitride layer is formed on said active areas and a silicon oxynitride is formed on said trench isolation region;
- forming a dielectric layer on said substrate;
- and
- etching an opening in said dielectric layer, wherein said opening overlies both a portion of said trench isolation region and a portion of said active area.
Dependencies are inferred from the claim text.