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US 6,281,124 B1Granted
Methods and systems for forming metal-containing films on substrates
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
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Abstract
A method of forming a film on a substrate using Group IVB, VB, or VIB metal complexes. The methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Claims17
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor composition comprising one or more complexes of the formula:
- [(R1)NC(R2)C(R3)N(R4)]xMLy
- wherein:
- M is a Group IVB, VB, or VIB metal;
- each R1, R2, R3, and R4 group is independently H or an organic group;
- L is selected from the group of CO, NO, CN, CS, CNR5,
- R6CN, or R7, wherein each R5, R6, and R7 group is independently an organic group;
- x=1 to 4;
- and
- y=1 to 4;
- and
- forming a metal-containing film from the precursor composition on a surface of the semiconductor substrate or substrate assembly.
10 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a precursor composition comprising one or more complexes of the formula:
- [(R1)NC(R2)C(R3)N(R4)]xMLy
- wherein:
- M is a Group IVB, VB, or VIB metal;
- each R1, R2, R3, and R4 is independently H or an organic group;
- L is selected from the group of CO, NO, CN, CS, CNR5,
- R6CN, or R7, wherein each R5, R6, and R7 group is independently an organic group
- x=1 to 4;
- and
- y=1 to 4;
- and
- forming a metal-containing film from the precursor composition on a surface of the substrate.
10 more elements
Dependencies are inferred from the claim text.