Method for forming an interplayer insulating film and semiconductor device
AssigneesCanon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
InventorKazuo Maeda
Life of this patent
Estimating the term…
Abstract
A method for forming an interlayer insulating film is disclosed. This method includes the steps of: forming a first insulating film on a substrate, the film containing at least one of H2O, C and a hydrocarbon; forming pores in the first insulating film by heat treatment of the first insulating film to discharge the H2O, C or hydrocarbon therefrom; and forming a second insulating film on the porous first insulating film.
Claims20
A method for forming an interlayer insulating film in a semiconductor device, comprising the steps of:
- forming a first insulating film on a substrate by chemical vapor deposition using a source gas containing a Si-containing compound, said first insulating film containing at least one inclusion selected from the group consisting of H2O, C and hydrocarbons;
- and
- subjecting said first insulating film to a heat treatment to discharge said one inclusion from said first insulating film, thereby forming porosity in said first insulating film.
A method for forming an interlayer insulating film, comprising the steps of:
- forming a masking film on a substrate having concavities and convexities;
- forming a first insulating film on said masking film, said first insulating film having an etching rate lower than that of said masking film;
- boring holes in said first insulating film;
- selectively etching said masking film through said holes;
- and
- forming a second insulating film on said first insulating film to close said holes.
Dependencies are inferred from the claim text.