Method for synthesizing single crystal AIN thin films of low resistivity n-type and low resistivity p-type
AssigneeJapan Science and Technology Corporation
InventorHiroshi Yoshida
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Abstract
In growing single AlN thin films on a semiconductor substrate by rapidly cooling a beam of atomic Al and atomic or molecular N obtained by exciting or decomposing N2 with an electromagnetic wave on the semiconductor substrate, an n-type dopant and a p-type dopant in the form of atomic beams are simultaneously doped in a crystal, so that pairs of an n-type dopant and a p-type dopant are formed in the crystal to synthesize single crystal AlN thin films of low resistivity n-type and low resistivity p-type.
Claims6
A method for synthesizing single crystal AlN thin films of low resistivity n-type and low resistivity p-type, the method including the steps of:
- subjecting a beam of atomic Al and atomic or molecular N obtained by exciting or decomposing N2 with an electromagnetic wave to rapid cooling and growing on a semiconductor substrate;
- and
- simultaneously doping an n-type dopant and a p-type dopant in the form of atomic beams, so that pairs of an n-type dopant and a p-type dopant are formed in a crystal.
A method for synthesizing single crystal AlN thin films of low resistivity n-type and low resistivity p-type synthesized in growing a single crystal AlN thin film by MOCVD method, which comprises simultaneously doping an acceptor and a donor by introducing O(oxygen) as an n-type dopant from SiO2 or sapphire of the substrate and C (carbon) as a p-type dopant from an organic metal compound.
Dependencies are inferred from the claim text.