Process for fabricating metal silicide layer by using ion metal plasma deposition
AssigneeVanguard International Semiconductor Corporation
InventorHorng-Huei Tseng
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Abstract
The present invention provides a process for fabricating a metal silicide layer. First, a silicon substrate having a polysilicon gate region and source/drain regions thereon is provided. Then, a spacer is formed on a sidewall of the gate region. Then, a metal layer is formed on the gate region and the source/drain regions by using ion metal plasma (IMP) deposition with substantially no metal layer formed on the spacer. Finally, the metal layer is transformed into a metal silicide layer. By means of the process of the present invention, since substantially on metal or only trace metal is formed on the spacer, the unwanted metal silicide formed on the spacer can be effectively prevented, and the undesirable bridging effect can be greatly alleviated.
Claims10
A process for fabricating a metal silicide layer, comprising:
- (a) providing a silicon substrate having a polysilicon gate region and source/drain regions thereon;
- (b) forming a spacer on a sidewall of the gate region;
- (c) forming a metal layer on the gate region and the source/drain regions by using ion metal plasma (IMP) deposition with substantially no metal layer formed on the spacer;
- (d) transforming the metal layer into a metal silicide layer;
- (e) forming a meta nitride layer on the metal silicide layer;
- and
- (f) forming a refractory metal layer on the metal nitride layer.
Dependencies are inferred from the claim text.