Semiconductor device having a low resistance gate conductor and method of fabrication the same

A method, comprising:

• providing a semiconducting substrate;
• forming a gate dielectric layer above said substrate;
• forming a gate electrode above the gate dielectric layer, said gate electrode having a top surface and a plurality of side surfaces;
• forming a refractory metal layer above said gate dielectric layer and on said top surface and on substantially all of said side surfaces of said gate electrode;
• converting at least a portion of said refractory metal layer on said top surface and said side surfaces of said gate electrode into a metal silicide;
• forming a sidewall spacer adjacent to said metal silicide on said side surfaces of said gate electrode;
• performing an initial ion implantation process with a light concentration of dopant atoms before said sidewall spaces are formed to form a lightly doped region in said substrate;
• performing a second ion implantation process with a higher concentration of dopant atoms;
• and,
• performing at least one anneal process to form source/drain region in said substrate.