Method for fabricating dynamic random access memory cell

A method for fabricating a dynamic random access memory cell, comprising:

• a step for forming at least one gate on the semiconductor substrate;
• a step for forming first sidewall spacers at the side portions of the gate;
• a step for forming at least one source/drain region;
• a step for forming a first insulation film over the semiconductor substrate including the gate;
• a step for patterning the first insulation film, and for forming at least one first contact hole and at least one second contact hole, respectively so that the upper surface of the source/drain can be exposed;
• a step for forming at least one storage node contact plug and at least one bit line plug in the first and second contact hole, respectively;
• a step for forming a second insulation film over the semiconductor substrate including the storage node contact plug and the bit line plug;
• a step for patterning the second insulation film, and for forming at least one storage node contact hole and at least one bit line contact hole, respectively so that the upper surface of the node contact plug and the bit line plug can be exposed;
• a step for forming on the second insulation film at least one bit line connected to the bit line plug through the bit line contact hole;
• a step for forming a third insulation film pattern on the bit line;
• a step for forming second sidewall spacers at the side portions of the bit line and the third insulation film pattern;
• a step for forming third sidewall spacers at the side portions of the storage node contact hole;
• a step for forming a fourth insulation film over the semiconductor substrate;
• a step for patterning the fourth insulation film, and for forming a fourth insulation film pattern;
• a step for forming a third conductive film over the semiconductor substrate including the fourth insulation film pattern;
• a step for forming a fifth insulation film on the third conductive film;
• a step for removing the third conductive film and the fifth insulation film so that the upper surface of the fourth insulation film pattern can be exposed;
• a step for removing the fourth insulation film pattern and the fifth insulation film;
• a step for forming a sixth insulation film on the third conductive film and the second insulation film pattern;
• and
• a step for forming a fourth conductive film on the sixth insulation film.