Method of manufacturing a capacitor in a memory device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsHan Sang Song, Chan Lim
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Abstract
There is disclosed a method of manufacturing a capacitor of a semiconductor device by which a CVD TiN film and a MOCVD TiN film, and a polysilicon film are sequentially stacked in forming an electrode on a Ta2O5 dielectric thin film. Therefore, it can prevent changes in thickness of the effective oxide film of the Ta2O5 capacitor against the characteristics of each of the CVD TiN film and the MOCVD TiN film, even after a rapid thermal process. It can also improve the step coverage, thus greatly improving the stability and reliability of the capacitor.
Claims18
A method of manufacturing a capacitor of a memory device, comprising the steps of:
- forming a lower electrode;
- forming a tantalum oxide film on said lower electrode;
- forming a CVD TiN layer on said tantalum oxide film;
- forming a MOCVD TiN layer on said CVD TiN layer in a separate step;
- and
- forming a poly-silicon layer on said MOCVD TiN layer;
- whereby an upper electrode having said CVD TiN layer, said MOCVD TiN layer and said poly-silicon layer is formed.
A method of manufacturing a capacitor of a memory device, comprising the steps of:
- forming a lower electrode;
- forming a tantalum oxide film on said lower electrode;
- forming a CVD TiN layer on said tantalum oxide film;
- forming a MOCVD TiN layer on said CVD TiN layer;
- and
- forming a poly-silicon layer on said MOCVD TiN layer;
- whereby an upper electrode having said CVD TiN layer, said MOCVD TiN layer and said poly-silicon layer is formed;
- wherein said lower electrode is formed by forming a poly-silicon layer on a substrate, a MOCVD TiN layer on said poly-silicon layer and a CVD TiN layer on said MOCVD TiN layer.
A method of manufacturing a capacitor of a memory device, comprising the steps of:
- forming a lower electrode;
- forming a tantalum oxide film on said lower electrode;
- forming a CVD TiN layer on said tantalum oxide film;
- forming a MOCVD TiN layer on said CVD TiN layer;
- and
- forming a poly-silicon layer on said MOCVD TiN layer;
- whereby an upper electrode having said CVD TiN layer, said MOCVD TiN layer and said poly-silicon layer is formed;
- wherein said CVD TiN layer uses TiCl4 as a raw material and NH3 as a reactive gas, wherein the temperature of the substrate is maintained at 300° C. through 500° C.
Dependencies are inferred from the claim text.