US 6,281,065 B1 · Semiconductor device fabrication method

Abstract

In order to define region in which a bipolar transistor is formed, region in which a MOS transistor is formed, and another predetermined region upon a substrate of p-type silicon, the substrate is selectively oxidized (by the LOCOS method). An element isolation region 200-500 nm thick is thereby formed. Then, a silicon oxide film 550 nm thick on the substrate, a silicon nitride film (an oxidation-resistant film) 100-300 nm thick, and a silicon oxide film 5-50 nm thick are formed. Thereafter, a publicly known photolithographic technique is used to form a photoresist pattern having an opening, and then, using the pattern as a mask, the silicon oxide film on the opening is removed. The bipolar transistor and the MOS transistor are thereby integrated in a monolithic manner without degrading the characteristics of the respective elements.

Claims11

Dependent claims

A semiconductor device fabrication method comprising:

forming first and second regions defined by an element isolation region on a semiconductor substrate;
forming an oxidation-resistant film on the semiconductor substrate;
forming a collector layer on said first region;
removing said oxidation film from said first region;
forming a silicon oxide film selectively on said first region using said oxidation-resistant film as a mask;
forming a base layer on said first region;
forming an emitter layer disposed in the base layer region;
forming an emitter electrode connected to said emitter layer via a contact hole formed through said silicon oxide film;
removing said oxidation-resistant film from said second region after having formed a bipolar transistor comprising said collector layer, base layer, and said emitter layer;
and
forming a MOS transistor in said second region after having removed said oxidation-resistant film.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor device fabrication method

Life of this patent

Semiconductor device fabrication method

Life of this patent

Abstract

Claims11