Method of fabricating a thin film transistor
AssigneeLG.Philips LCD Co., Ltd.
InventorJoon-Young Yang
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Abstract
A method of fabricating a TFT includes a step of forming an impurity region for a source and a drain by simultaneously implanting and activating impurity ions. More particularly, the present invention includes the steps of forming a gate insulating layer and a gate on a predetermined and selected portion of an active layer, forming an excited region in the exposed portion of the active layer by implanting hydrogen ions to the active layer by using the gate as a mask, and forming an impurity region by implanting impurity ions heavily to the excited region which remains in an excited state.
Claims19
A method of fabricating a thin film transistor, comprising the steps of:
- forming a gate insulating layer having a thickness of between 500-1500 Å on an active layer having a thickness between 400 and 800 Å;
- forming a gate on said gate insulating layer;
- forming an excited region in an exposed portion of said active layer by implanting hydrogen ions into said active layer using said gate as a mask, wherein said hydrogen ions are implanted with an implantation energy between 50 and 150 KeV;
- and
- forming an impurity region by implanting impurity ions into said excited region while said excited region remains in an excited state.
A thin film transistor prepared by the steps of:
- forming a gate insulating layer having a thickness of between 500-1500 Å on an active layer having a thickness between 400 and 800 Å;
- forming a gate on said gate insulating layer;
- forming an excited region in an exposed portion of said active layer by implanting hydrogen ions into said active layer using said gate as a mask, wherein said hydrogen ions are implanted with an implantation energy between 50 and 150 KeV;
- and
- forming an impurity region by implanting impurity ions into said excited region while said excited region remains in an excited state.
Dependencies are inferred from the claim text.