Thin film transistor with reduced hydrogen passivation process time
AssigneeNEC Corporation
InventorKatsuhisa Yuda
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Abstract
A thin film field effect transistor includes source and drain regions, an active region sandwiched by the source and drain semiconductor regions. A gate insulating film is provided to cover the source and drain regions and the active region, and a semiconductor gate is formed on the gate insulating film above the active region. A gate electrode is formed on the semiconductor gate such that a non-covering portion where the gate electrode does not cover the semiconductor gate is formed.
Claims20
A method of manufacturing a thin film field effect transistor, comprising the steps of:
- forming source and drain regions and an active region sandwiched by said source and drain regions on a substrate;
- forming a gate insulating film on said source and drain regions and said active region;
- forming a gate structure which comprises a semiconductor gate and a gate electrode, wherein said semiconductor gate is formed on said gate insulating film above said active region, and said gate electrode is formed on said semiconductor gate such that said semiconductor gate has a top electrode exposure portion where said semiconductor gate is not covered by said gate electrode;
- and
- performing a hydrogen passivation after said gate structure is formed.
A method of manufacturing a thin film field effect transistor, comprising the steps of:
- forming source and drain regions and an active region sandwiched by said source and drain regions on a substrate;
- forming a gate insulating film on said source and drain regions and said active region;
- forming a gate structure which comprises a semiconductor gate and a gate electrode, wherein said semiconductor gate is formed on said gate insulating film above said active region, and said gate electrode is formed on said semiconductor gate such that said semiconductor gate has a top electrode exposure portion where said semiconductor gate is not covered by said gate electrode;
- and
- injecting at least one of hydrogen molecules, hydrogen ions and hydrogen radicals through said top electrode exposure portion of said semiconductor gate.
Dependencies are inferred from the claim text.