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AssigneeForschungszentrum Rossendorf e.V.
InventorsViton Heera, Wolfgang Skorupa
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The invention relates to the production of semiconductor elements made of diamond, diamond layers and diamond-like layers, which are doped using the ion implantation method and on which N-type conductive areas are also placed. According to the invention, silicium at a concentration of more than 0.1 atom % is implanted in the lateral and depth areas to be doped, in addition to the elements of the fifth main group known per se which are used in doping. The silicium can be implanted before or after the elements of the fifth main group are applied to the diamond substrate or in a step comprising both. When silicium is implanted after the ions of the elements of the fifth main group, regeneration can be carried out after each implantation or after the second implantation.
A method for the targeted production of n-conducting areas in diamonds, diamond layers and diamond-like layers, comprising introducing ions of elements of the fifth main group and silicon ions by ion implantation, in the lateral and deep region, which is to be doped, in a concentration of more than 0.1 atom percent, to produce ion implanted diamonds, diamond layers and diamond-like layers, and thermally annealing the ion implanted diamonds, diamond layers and diamond-like layers.
Dependencies are inferred from the claim text.