Method of fabricating film for solar cells
AssigneeAgency of Industrial Science & Technology, Ministry of International Trade & Industry
InventorsShigeru Niki, Akimasa Yamada, Paul Fons, Hiroyuki Oyanagi
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Abstract
A method of fabricating Cuα(InxGa1−x)β(SeyS1−y)γ films for solar cells includes forming an electrode on a substrate and supplying the substrate and electrode with Cu, In, Ga, Se, and S to form a Cuα(InxGa1−x)β(SeyS1−y)γ film. Simultaneously with the supplying of Cu, In, Ga, Se and S, the substrate is supplied with water vapor or a gas that contains a hydroxyl group.
Claims14
A method of fabricating a Cuα(InxGa1−x)62 (SeyS1−y)γ film for solar cells, comprising:
- forming an electrode on a substrate and supplying Cu, In, Ga, Se, and S from a first source to the electrode to form the Cuα(InxGa1−x)β(SeyS1−y)γ film on said electrode and at the same time supplying thereto water vapor or a gas containing a hydroxyl group from a second source;
- wherein 0≦x≦1, 0≦y≦1, and α, β, and γ are arbitrary integers.
A method of fabricating a Cuα(InxGa1−x)β(SeyS1−y)γ film for solar cells, comprising:
- forming a Cuα(InxGa1−x)β(SeyS1−y)γ film on a substrate in a vacuum chamber by depositing or sputtering Cu, In, Ga, Se, and S from a first source onto the substrate and at the same time supplying to the substrate water vapor or a gas containing a hydroxyl group from a second source;
- wherein 0≦x≦1, 0≦y≦1, and α, β, and γ are arbitrary integers.
A method of fabricating a Cuα(InxGa1−x)β(SeyS1−y)γ film for solar cells, comprising:
- forming a Cuα(InxGa1−x)β(SeyS1−y)γ film on a substrate in a gas reaction chamber by effecting a flow of gas that comprises Cu, In, Ga, Se, and S from a first source to the substrate, and at the same time supplying to the substrate water vapor or a gas containing a hydroxyl group from a second source;
- wherein 0≦x≦1, 0≦y≦1, and α, β, and γ are arbitrary integers.
A method of fabricating a Cuα(InxGa1−x)β(SeyS1−y)γ film for solar cells, comprising:
- forming a Cuα(InxGa1−x)β(SeyS1−y)γ film on a substrate in a vacuum chamber by depositing or sputtering Cu, In, Ga, Se, and S from a first source onto the substrate;
- placing the substrate in a gas atmosphere containing Se;
- wherein the substrate is supplied with water vapor or a gas containing a hydroxyl group from a second source during either or both of the deposition or sputtering and the annealing;
- wherein 0≦x≦1, 0≦y≦1, and α, β, and γ are arbitrary integers.
Dependencies are inferred from the claim text.