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US 6,281,023 B1Granted
Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced encapsulation layer
AssigneeRamtron International Corporation
InventorsBrian Lee Eastep, Thomas A. Evans
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Abstract
A ferroelectric capacitor includes a bottom electrode, a top electrode, and a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of the top electrode. The total encapsulation of the top electrode reduces the sensitivity of the ferroelectric capacitor to hydrogen and thus improves electrical switching performance.
Claims9
A method of fabricating a ferroelectric capacitor, the method comprising the steps of:
- (a) forming in sequence a bottom electrode layer, a ferroelectric layer, and a top electrode layer;
- (b) etching the top electrode layer to form a top electrode;
- (c) forming a lead-enhanced PZT encapsulation layer over the ferroelectric layer, thereby completely encapsulating the top electrode;
- (d) etching the encapsulation layer;
- and
- (e) metalizing the top electrode through the etched encapsulation layer.
3 more elements
A method of fabricating a ferroelectric capacitor comprising:
- (a) forming a bottom electrode layer, a ferroelectric layer, and a top electrode layer;
- (b) etching the top electrode layer to form a top electrode;
- and
- (c) forming a lead-enhanced PZT encapsulation layer over the ferroelectric layer.
1 more element
Dependencies are inferred from the claim text.