Phase-change information recording medium and optical recording method to make higher rotation rates feasible
AssigneeRicoh Company, Ltd.
InventorsYuki Nakamura, Katsuyuki Yamada, Eiji Noda, Ippei Ogawa
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AssigneeRicoh Company, Ltd.
InventorsYuki Nakamura, Katsuyuki Yamada, Eiji Noda, Ippei Ogawa
Estimating the term…
An information recording medium includes a substrate, a first protective layer formed on the substrate, a recording layer formed on the first protective layer, and a second protective layer formed on the recording layer. The first protective layer has a thickness in a range from 65 nm to 130 nm. The second protective layer has a thickness in a range from 15 nm to 45 nm. The recording layer has a thickness in a range from 15 nm to 35 nm and is composed of a phase-change alloy with the composition in terms of atomic percentage being represented by the formula AgaInbSbcTed where 0<a<6, 3≦b≦15, 50≦c≦65, 20≦d≦35, a+b+c+d=100. The information recording medium is configured to provide capabilities of reading, writing and overwriting of information at linear rotation rates ranging from 1.2 m/s to 11.2 m/s. Further, an optical recording method is adapted to achieve the reading, writing and overwriting of information for the information recording medium at the linear rotation rates without significant degradation.
An information recording medium comprising a substrate, a first protective layer formed on the substrate, a recording layer formed on the first protective layer, and a second protective layer formed on the recording layer, the first protective layer having a thickness in a range from 65 nm to 130 nm, the second protective layer having a thickness in a range from 15 nm to 45 nm, the recording layer having a thickness in a range from 15 nm to 35 nm and being composed of a phase-change alloy with the composition in terms of atomic percentage being represented by the formula
An information recording medium comprising a substrate, a first protective layer formed on the substrate, a recording layer formed on the first protective layer, and a second protective layer formed on the recording layer, the first protective layer having a thickness in a range from 65 nm to 130 nm, the second protective layer having a thickness in a range from 15 nm to 45 nm, the recording layer having a thickness in a range from 15 nm to 35 nm and being composed of a phase-change alloy with the composition in terms of atomic percentage being represented by the formula
An optical recording method for writing or overwriting of information to an information recording medium through a pulsewidth modulation PWM conversion, comprising the steps of:
Dependencies are inferred from the claim text.