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US 6,280,700 B1Granted
Film of titanium dioxide containing silicon dioxide and a method of forming the same
AssigneeAgency of Industrial Science and Technology
InventorsJunji Nishii, Adilson Oliveira da Silva, Derek A. H. Cunningham, Takahiro Inoue
Life of this patent
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Abstract
A film containing TiO2 and SiO2. It is formed by depositing TiO2 and SiO2 onto a substrate by sputtering method, or depositing their vapors thereon. The film is heat treated at a temperature of 200-1200° C. to form a film of anatase type TiO2 containing SiO2.
Claims2
A method of producing an anatase TiO2 film containing SiO2, which method comprises the steps of:
- (1) forming a film comprising TiO2 and SiO2 by simultaneously depositing TiO2 and SiO2 on a silica glass substrate by sputtering, and then
- (2) subjecting the formed film to a heat treatment at a temperature of 300 to 1200° C.
Dependencies are inferred from the claim text.