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US 6,280,652 B1Granted
Edge polishing composition
AssigneeFujimi Incorporated
InventorsYutaka Inoue, Akihiro Kawase
Life of this patent
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Abstract
An edge polishing composition for wafers, comprising water and silicon dioxide having an average particle size of from 70 to 2,500 nm.
Claims5
A method of polishing the edge surface of silicon wafers or oxide film-coated semiconductor wafers with an edge polishing composition comprising water and silicon dioxide having an average particle size from 70 to 2,500 nm, wherein the silicon dioxide is selected from the group consisting of colloidal silica, fumed silica and precipitated silica.
Dependencies are inferred from the claim text.