Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting
AssigneeLumileds Lighting U.S., LLC
InventorsCarrie Carter Coman, Fred A. Kish, Jr., R. Scott Kern, Michael R. Krames, Paul S. Martin
Life of this patent
Estimating the term…
Abstract
Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
Claims18
A method for fabricating a AlxGayInzN structure, comprising the steps of:
- attaching a host substrate to a first mirror stack;
- fabricating a AlxGayInzN structure on a sacrificial growth substrate;
- creating a wafer bond interface;
- removing the sacrificial growth substrate by laser melting;
- and
- depositing electrical contacts to the AlxGayInzN structure.
A method for fabricating a AlxGayInzN structure comprising the steps of:
- fabricating a AlxGayInzN structure to a sacrificial growth substrate;
- depositing a first mirror stack on top of a AlxGayInzN structure;
- wafer bonding a host substrate to the first mirror stack to create a wafer bond interface;
- removing the sacrificial growth substrate by laser melting;
- and
- depositing electrical contacts to the AlxGayInzN structure.
Dependencies are inferred from the claim text.