Etching method and method for manufacturing semiconductor device using the same
AssigneeDenso Corporation
InventorsSatoshi Shiraki, Makoto Ohkawa
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Abstract
In a method for manufacturing a semiconductor device, a barrier metal disposed on a metallic thin film for forming a thin film resistor is patterned by wet-etching. The wet-etching produces a residue of the barrier metal. The residue is removed after the oxidation thereof. Accordingly the residue is completely removed. As a result, the patterning of the thin film resistor is stably performed, and short-circuit does not occur to a wiring pattern disposed above the barrier metal.
Claims18
An etching method comprising:
- oxidizing a specific region of a thin film including tungsten;
- removing the specific region by an alkaline solution,
- patterning an electrode material including tungsten by a solution including hydrogen peroxide;
- oxidizing a residue that is produced when the electrode material is patterned;
- and
- removing the oxidized residue.
A method for manufacturing a semiconductor device, comprising:
- forming a thin film resistor film on a substrate;
- forming a barrier metal film on the thin film resistor;
- forming an electrode film on the barrier metal film;
- patterning the electrode film to form an electrode;
- patterning the barrier metal film to form a barrier metal based on a shape of the electrode;
- oxidizing a residue that is produced when the barrier metal film is patterned;
- and
- removing the oxidized residue.
A method for manufacturing a semiconductor device, comprising:
- forming a thin film resistor film for forming a thin film resistor on a semiconductor substrate;
- forming a barrier metal film for forming a barrier metal on the thin film resistor film;
- pattering the barrier metal film by wet-etching to define a shape of a specific portion of the barrier metal film and to produce a residue at a portion other than the specific portion of the barrier metal film;
- oxidizing the residue;
- and
- removing the oxidized residue.
Dependencies are inferred from the claim text.