Read sensor with improved thermal stability and manufacturing method therefor

A bilayer structure, comprising:

• a ferromagnetic layer;
• an antiferromagnetic layer;
• and
• a thin oxide layer having a thickness less than about ten times the diameter of an oxygen atom and disposed between said ferromagnetic layer and said antiferromagnetic layer, said thin oxide layer operable to minimize thermal degradation of the bilayer structure due to interlayer atomic diffusion between said ferromagnetic layer and said antiferromagnetic layer and to enhance a coupling between said ferromagnetic layer and said antiferromagnetic layer.

A spin valve sensor, comprising:

• a first ferromagnetic layer, said first ferromagnetic layer includes a magnetization;
• an antiferromagnetic layer, said antiferromagnetic layer is capable of pinning said magnetization in a predetermined direction;
• and
• a thin oxide layer having a thickness of less than about ten times the diameter of an oxygen atom and disposed between said first ferromagnetic layer and said antiferromagnetic layer, said thin oxide layer operable to minimize thermal degradation of the spin valve sensor due to interlayer atomic diffusion between said first ferromagnetic layer and said antiferromagnetic layer and to enhance a coupling between said first ferromagnetic layer and said antiferromagnetic layer.

A spin valve sensor, comprising:

• a first ferromagnetic layer, said first ferromagnetic layer includes a magnetization;
• an antiferromagnetic layer, said antiferromagnetic layer is capable of pinning said magnetization in a predetermined direction;
• and
• a thin oxide layer having a thickness less than about ten times the diameter of an oxygen atom and disposed between said first ferromagnetic layer and said antiferromagnetic layer, wherein said antiferromagnetic layer comprises a material selected from the group consisting of FeMn, IrMn, MnPt, PdPtMn, NiMn, TbCo, FeRh—Ir, a combination thereof, a compound thereof, and an alloy thereof.

A spin valve sensor, comprising:

• a first ferromagnetic layer, said first ferromagnetic layer includes a magnetization, wherein said first ferromagnetic layer comprises a material selected from the group consisting of Group VIII materials, a combination thereof, a compound thereof, and an alloy thereof;
• an antiferromagnetic layer, said antiferromagnetic layer is capable of pinning said magnetization in a predetermined direction, wherein said antiferromagnetic layer comprises a material selected from the group consisting of FeMn, IrMn, MnPt, PdPtMn, NiMn, TbCo, FeRh—Ir, a combination thereof, a compound thereof, and an alloy thereof;
• and
• a thin oxide layer disposed between said first ferromagnetic layer and said antiferromagnetic layer, wherein said thin oxide layer has a thickness of less than about ten times the diameter of an oxygen atom.

A method for forming a spin valve sensor, comprising:

• providing an antiferromagnetic layer, said antiferromagnetic layer including a material selected from the group consisting of FeMn, IrMn, MnPt, PdPtMn, NiMn, TbCo, FeRh—Ir, a combination thereof, a compound thereof, and an alloy thereof;
• forming a thin oxide layer to a thickness of less than about ten times the diameter of an oxygen atom on said antiferromagnetic layer;
• and
• forming a ferromagnetic layer on said thin oxide layer, said ferromagnetic layer includes a magnetization, wherein said antiferromagnetic layer is capable of pinning said magnetization in a predetermined direction.