Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad

A chemical-mechanical polishing process comprising:

• providing a semiconductor wafer having a layer comprising copper at least at 50% molar;
• positioning the wafer in proximity with a fixed abrasive chemical-mechanical polishing pad;
• providing a copper layer chemical-mechanical polishing solution intermediate the wafer and pad, the copper layer chemical-mechanical polishing solution comprising a copper oxidizing component present at from about 0.5% to 15% by volume, a copper corrosion inhibitor present at from about 0.01% to 2% by weight, a pH of less than or equal to 7.0, and a pH buffer selected from the group consisting of potassium hydrogen phthalate, ammonium acetate, ammonium oxalate, ammonium carbamate and mixtures thereof;
• and
• chemical-mechanical polishing the copper comprising layer with the fixed abrasive pad with the copper layer chemical-mechanical polishing solution being received between the wafer and pad.

A chemical-mechanical polishing process comprising:

• providing a semiconductor wafer having a layer comprising copper at least at 50% molar;
• positioning the wafer in proximity with a fixed abrasive chemical-mechanical polishing pad;
• providing a copper layer chemical-mechanical polishing solution intermediate the wafer and pad, the copper layer chemical-mechanical polishing solution comprising a copper oxidizing component present at from about 0.5% to 15% by volume, a copper corrosion inhibitor present at from about 0.01% to 2% by weight, a pH of less than or equal to 7.0, and a surfactant selected from the group consisting of polyoxyethylene ether, glycerol, polypropylene glycol, polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, and mixtures thereof;
• and
• chemical-mechanical polishing the copper comprising layer with the fixed abrasive pad with the copper layer chemical-mechanical polishing solution being received between the wafer and pad.

A chemical-mechanical polishing process comprising:

• providing a semiconductor wafer having a layer comprising copper at least at 50% molar;
• oxidizing copper from the layer with a solution comprising a copper corrosion inhibitor present at from about 0.01% to 2% by weight and a pH of less than or equal to 7.0, the inhibitor being selected from the group consisting of quinoline, dicyclohexamine nitrate, potassium silicate, ammonium borate, ammonium phosphate, potassium dichromate and mixtures thereof;
• and
• polishing one or both of copper and copper oxide from the copper comprising layer with a fixed abrasive chemical-mechanical polishing pad.

A chemical-mechanical polishing process comprising:

• providing a semiconductor wafer having a layer comprising copper at least at 50% molar;
• oxidizing copper from the layer with a solution comprising a copper corrosion inhibitor present at from about 0.01% to 2% by weight and a pH of less than or equal to 7.0 and a pH buffer selected from the group consisting of potassium hydrogen phthalate, ammonium acetate, ammonium oxalate, ammonium carbamate and mixtures thereof;
• and
• polishing one or both of copper and copper oxide from the copper comprising layer with a fixed abrasive chemical-mechanical polishing pad.

A chemical-mechanical polishing process comprising:

• providing a semiconductor wafer having a layer comprising copper at least at 50% molar;
• oxidizing copper from the layer with a solution comprising a copper oxidizing component present at from about 0.1% to 15% by volume, a copper corrosion inhibitor present at from about 0.01% to 2% by weight, a copper complexing agent present at from about 0.1% to 15% by volume, and a pH of greater than or equal to 7.0, and the complexing agent comprising ammonia derived from a material in the solution selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium carbamate and mixtures thereof;
• and
• chemical-mechanical polishing the copper comprising layer with the fixed abrasive pad with the copper layer chemical-mechanical polishing solution being received between the wafer and pad.

A chemical-mechanical polishing process comprising:

• providing a semiconductor wafer having a layer comprising copper at least at 50% molar;
• positioning the wafer in proximity with a fixed abrasive chemical-mechanical polishing pad;
• providing a copper layer chemical-mechanical polishing solution intermediate the wafer and pad, the copper layer chemical-mechanical polishing solution comprising a copper oxidizing component present at from about 0.1% to 15% by volume, a copper complexing agent present at from about 0.1% to 15% by volume, and a pH of greater than or equal to 7.0, a pH buffer selected from the group consisting of potassium hydrogen phthalate, ammonium acetate, ammonium oxalate and ammonium carbamate;
• and
• chemical-mechanical polishing the copper comprising layer with the fixed abrasive pad with the copper layer chemical-mechanical polishing solution being received between the wafer and pad.

A chemical-mechanical polishing process comprising:

• providing a semiconductor wafer having a layer comprising copper at least at 50% molar;
• positioning the wafer in proximity with a fixed abrasive chemical-mechanical polishing pad;
• providing a copper layer chemical-mechanical polishing solution intermediate the wafer and pad, the copper layer chemical-mechanical polishing solution comprising a copper oxidizing component present at from about 0.1% to 15% by volume, a copper complexing agent present at from about 0.1% to 15% by volume, and a pH of greater than or equal to 7.0, and a surfactant selected from the group consisting of polyoxyethylene ether, glycerol, polypropylene glycol, polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, and mixtures thereof;
• and
• chemical-mechanical polishing the copper comprising layer with the fixed abrasive pad with the copper layer chemical-mechanical polishing solution being received between the wafer and pad.

A chemical-mechanical polishing process comprising:

• providing a semiconductor wafer having a layer comprising copper at least at 50% molar;
• positioning the wafer in proximity with a fixed abrasive chemical-mechanical polishing pad;
• providing a copper layer chemical-mechanical polishing solution intermediate the wafer and pad, the copper layer chemical-mechanical polishing solution comprising a copper oxidizing component present at from about 0.1% to 15% by volume, a copper complexing agent present at from about 0.1% to 15% by volume, and a pH of greater than or equal to 7.0, the inhibitor being selected from the group consisting of quinoline, dicyclohexamine nitrate, potassium silicate, ammonium borate, ammonium phosphate, potassium dichromate and mixtures thereof;
• and
• chemical-mechanical polishing the copper comprising layer with the fixed abrasive pad with the copper layer chemical-mechanical polishing solution being received between the wafer and pad.