Semiconductor laser device and method of producing the same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYutaka Nagai, Yutaka Mihashi, Motoharu Miyashita, Yasutomo Kajikawa
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Abstract
A semiconductor laser device on a GaAs substrate and having an oscillation wavelength of 1.3 μm or 1.55 μm and a method of producing the laser device. The laser device has a BTlGaAs active layer that lattice matches with the GaAs substrate. To grow the BTlGaAs active layer, organometallic vapor phase deposition is employed with cyclopentadienyl thallium as the source of Tl.
Claims16
A semiconductor laser comprising a first cladding layer of a first conductivity type, an active layer, a second cladding layer of a second conductivity type, and a contact layer of the second conductivity type arranged successively on a GaAs substrate of the first conductivity type, wherein the active layer is a GaAs based mixed crystal of Group III and Group V elements, having a zinc blende structure and comprises (B1−yTly)xGa1−xAs, wherein 0.27≦x≦0.36 and 0.62≦y≦0.70.
A method of producing a semiconductor laser device forming at least a first cladding layer, an active layer comprising (B1−yTly)xGa1−xAs, wherein 0.27≦x≦0.36 and 0.62≦y≦0.70, a second cladding layer, and a contact layer, successively, on a GaAs substrate by organometallic vapor phase deposition.
Dependencies are inferred from the claim text.