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US 6,275,408 B1Granted
Ferroelectric memory and method
AssigneeTexas Instruments Incorporated
InventorsKatsuhiro Aoki, Tomoyuki Sakoda
Life of this patent
Estimating the term…
Abstract
Ferroelectric memory with one-capacitor/one-transistor cells and a reference cell with double the capacitance plus a sense amplifier for comparing transient currents in resistors at the sense amplifier inputs. The reference cell includes a diode to prevent reference capacitor polarization switching.
Claims7
A memory, comprising:
- (d) a plurality of ferroelectric capacitor cells;
- (e) a reference capacitor cell;
- and
- (f) a sense amplifier with a first input coupled between a first resistor and said ferroelectric capacitor cells and with a second input coupled to a second resistor and to said reference capacitor cell.
1 more element
Dependencies are inferred from the claim text.