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US 6,275,137 B1Granted
Semiconductor piezoresistor
AssigneeBoston MicroSystems, Inc.
InventorsDharanipal Doppalapudi, Theodore D. Moustakas, Richard Mlcak, Harry L. Tuller
Life of this patent
Estimating the term…
Abstract
A piezoresistor having a base substrate with a quantum well structure formed on the base substrate. The quantum well structure includes at least one quantum well layer bounded by barrier layers. The barrier layers are formed from a material having a larger bandgap than the at least one quantum well layer.
Claims30
A piezoresistor comprising:
- a base substrate;
- and
- a quantum well structure formed on the base substrate, the quantum well structure comprising at least one quantum well layer bounded by barrier layers, the barrier layers being formed from a material having a larger bandgap than the at least one quantum well layer, the at least one quantum well layer having a thickness of 30 Å or less.
A piezoresistor comprising:
- a single crystal base substrate;
- and
- a quantum well structure formed on the base substrate, the quantum well structure having alternating semiconductor barrier and quantum well layers, the barrier layers being formed from a material having a larger bandgap than the quantum well layers, the quantum well layers having a thickness of 30 Å or less.
A piezoresistor comprising:
- a base substrate, at least a portion of the base substrate being formed of a single crystal material;
- and
- a quantum well structure formed on the single crystal portion of the base substrate, the quantum well Structure having alternating semiconductor barrier and quantum well layers, the barrier layers being formed from a material having a larger bandgap than the quantum well layers, the quantum well layers having a thickness of 30 Å or less.
A method of forming a piezoresistor comprising the steps of:
- providing a base substrate;
- and
- depositing at least one quantum well layer bounded by barrier layers on the base substrate to form a quantum well structure, the barrier layers being formed from a material having a larger bandgap than the at least one quantum well layer, the at least one quantum well layer having a thickness of 30 Å or less.
A method of forming a piezoresistor comprising the steps of:
- providing a single crystal base substrate;
- and
- depositing alternating semiconductor barrier and quantum well layers on the base substrate to form a quantum well structure, the barrier layers being formed from a material having a larger bandgap than the quantum well layers, the quantum well layers having a thickness of 30 Å or less.
Dependencies are inferred from the claim text.