Power amplifier having two-dimensional FET array
AssigneeMotorola, Inc.
InventorsWarren L. Seely, Armando J. Mendoza, John D. Goshinska, Jr.
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Abstract
A two-dimensional FET array (102) within a Q-band power amplifier module is presented. Array (102) has a plurality of substantially identical one-dimensional FET arrays (106) substantially centered upon a primary axis (130) of two-dimensional array (106) substantially perpendicular to a propagation axis (110) of module (100). Each one-dimensional array (106) is formed of a plurality of FETs (128) substantially centered along a FET axis (134) substantially parallel to propagation axis (110). Each one-dimensional array (106) is proximate and coupled to each of an input bus (136) and an output bus (138), both oriented substantially parallel to propagation axis (110).
Claims19
A two-dimensional field-effect transistor (FET) array configured as a millimeter-wave power amplifier, said two-dimensional FET array comprising:
- a plurality of substantially identical one-dimensional FET arrays, wherein each of said one-dimensional FET arrays is formed of a plurality of FET elements extending in a first direction, and wherein said plurality of said one-dimensional FET arrays extends in a second direction substantially perpendicular to said first direction;
- an input bus oriented in substantially said first direction proximate to one of said one-dimensional FET arrays;
- and
- an output bus oriented in substantially said first direction proximate to said one of said one-dimensional FET arrays.
A millimeter-wave power-amplifier module having a propagation axis, said power-amplifier module comprising:
- an output interface substantially centered on said propagation axis;
- a two-dimensional field-effect transistor (FET) array configured as a power amplifier, coupled to said output interface, and substantially centered on said propagation axis;
- an input interface coupled to said FET two-dimensional-FET array, and substantially centered upon said propagation axis;
- and
- a driver amplifier coupled to said input interface, and substantially centered upon said propagation axis.
A two-dimensional field-effect transistor (FET) array configured as a Q-band power amplifier having a propagation axis, said two-dimensional FET array comprising:
- a plurality of substantially identical one-dimensional FET arrays substantially centered upon a two-dimensional FET array axis substantially perpendicular to said propagation axis, wherein each of said one-dimensional FET arrays is formed of a plurality of FET elements substantially centered along a one-dimensional FET array axis substantially parallel to said propagation axis;
- a plurality of input busses oriented substantially parallel to said propagation axis;
- and
- a plurality of output busses oriented substantially parallel to said propagation axis.
Dependencies are inferred from the claim text.