Reference voltage generators including first and second transistors of same conductivity type and at least one switch
AssigneeSamsung Electronics Co., Ltd.
InventorsJong-min Park, Tae-sung Jung
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsJong-min Park, Tae-sung Jung
Estimating the term…
Reference voltage generators can be made relatively insensitive to variations in threshold voltages due to device fabrication processes by providing first and second transistors of the same conductivity type that are connected to one another and between first and second power supply voltages, such that the first transistor operates below the threshold voltage thereof and the second transistor operates above the threshold voltage thereof. The first transistor includes a gate that is coupled to a first node connected to a first power supply voltage and that is connected between an output reference voltage terminal and a second node that is connected to a second power supply voltage. The second transistor includes a gate that is coupled to the second node and is connected between the first node and the second power supply voltage. At least one switch also may be included, which disconnects the reference voltage generator from the first and second power supply voltages in response to a control signal, to thereby allow reduced standby power.
A reference voltage generator that generates a reference voltage at a reference voltage output terminal thereof, the reference voltage generator comprising:
A reference voltage generator that generates a reference voltage at a reference voltage output terminal thereof, the reference voltage generator comprising:
A reference voltage generator that generates a reference voltage at a reference voltage output terminal thereof, the reference voltage generator comprising:
Dependencies are inferred from the claim text.