US 6,274,918 B1Granted

Integrated circuit diode, and method for fabricating same

AssigneeTexas Instruments Incorporated

InventorsChin-Yu Tsai, Taylor R. Efland

Life of this patent

Estimating the term…

Loading patent…

Abstract

An integrated circuit (10) includes a P-epi substrate (12) having therein an n-well isolation layer (13) and a p-well (14) within the n-well. The p-well includes adjacent an upper surface thereof a p+ layer (18) having several elongate parallel openings (21-23) therethrough. Each of the openings has therein a respective n− RESURF layer (26-28). Each n− RESURF layer has therethrough a respective further elongate opening (31-33), and has a uniform horizontal thickness all around that opening. Each of the openings in the RESURF layers has therein an n+ finger (36-38). The p+ layer and the n+ fingers each have a vertical thickness which is greater than the vertical thickness of the n− RESURF layers. The p+ layer serves as the anode of a zener diode, and the n+ fingers are interconnected and serve as the cathode.

Claims6

Dependent claims

An integrated circuit diode, comprising:

a substrate having a portion which is made of a first type of semiconductor material;
a first region which is disposed in said portion of said substrate and which is made from said first type of semiconductor material;
a second region which is disposed in said portion of said substrate, which is spaced from said first region, and which is made from a second type of semiconductor material different from said first type of semiconductor material, said first type of semiconductor material being one of a p-type and an n-type semiconductor material, and said second type of semiconductor material being the other of a p-type and an n-type semiconductor material;
and
a RESURF region which is disposed in said substrate between said first and second regions, which is in contact with said second region, which is made from said second type of semiconductor material, and which is doped more lightly than said second region,
wherein said RESURF region extends from said second region to said first region.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 09/252,171Filed 18 Feb 1999 · us provisional application
Priority: 19 Feb 1998
Granted: 14 Aug 2001
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10D 84/403
Combinations of FETs or IGBTs with BJTs: combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
H10D 8/25
Breakdown diodes, e.g. avalanche diodes: zener diodes
H10D 62/105
For increasing or controlling the breakdown voltage of reverse-biased devices: by having particular doping profiles, shapes or arrangements of PN…
H10D 62/126
Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions: top-view geometrical layouts of…