Nonvolatile floating gate memory with improved interpoly dielectric
AssigneeMicron Technology, Inc.
InventorsRalph Kauffman, Roger Lee
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Abstract
A floating memory device utilizing a composite oxide/oxynitride or oxide/oxynitride/oxide interpoly dielectric.
Claims23
A dielectric stack for a transistor including an electrode, the stack comprising:
- a first oxide over the electrode of the transistor;
- an oxynitride over the first oxide;
- and
- a second oxide over the oxynitride.
An insulator for a semiconductor device including a first conductive element and a second conductive element opposing the first conductive element, the insulator comprising:
- a first oxide proximate the first conductive element of the semiconductor device;
- a second oxide proximate the second conductive element;
- and
- an oxynitride between the first oxide and the second oxide.
A dielectric component for a memory device including an oxide layer, the component comprising an oxynitride layer on the oxide layer of the memory device, wherein the oxynitride layer is distinct from the oxide layer.
An insulator for conductive gates of a memory device, the insulator comprising:
- a first layer over one of the conductive gates of the memory device, the first layer comprising oxygen and generally lacking nitrogen;
- a second layer over the first layer, the second layer comprising oxygen and nitrogen;
- and
- a third layer over the second layer, the third layer comprising oxygen and generally lacking nitrogen.
A memory device, comprising:
- a first conductive element of the memory device;
- an insulative composite over the first conductive element, the insulative composite comprising:
- a plurality of oxide layers, and
- an oxynitride between at least two layers of the plurality of oxide layers, wherein the oxynitride is distinct from at least one of the two layers;
- and
- a second conductive element over the insulative composite.
A charge storage device, comprising:
- a first conductor serving as a component of the charge storage device;
- an oxide/oxynitride/oxide stack next to the first conductor;
- and
- a second conductor next to the stack.
A dielectric component for a transistor including oxide between two transistor gates, the component comprising an oxynitride between at least two portions of the oxide of the transistor.
Dependencies are inferred from the claim text.