Electron emission element having semiconductor emitter with localized state, field emission type display device using the same, and method for producing the element and the device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKoji Akiyama, Hideo Kurokawa
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Abstract
In an electron emission element having an emitter section for emitting electrons, the emitter section includes, on a first conductive electrode, a structure in which at least a first semiconductor layer, a second semiconductor layer, an insulating layer and a second conductive electrode are deposited sequentially; and the first and second semiconductor layers include at least one of carbon, silicon and germanium as a main component, and the first semiconductor layer includes at least one type of atoms among carbon atom, oxygen atoms and nitrogen atoms which is different from the main component.
Claims22
An electron emission element having an emitter section for emitting electrons, wherein:
- the emitter section includes, on a first conductive electrode, a structure in which at least a first semiconductor layer, a second semiconductor layer, an insulating layer and a second conductive electrode are deposited sequentially, and
- the first and second semiconductor layers include at least one of carbon, silicon and germanium as a main component, and the first semiconductor layer includes at least one type of atoms among carbon atoms, oxygen atoms and nitrogen atoms which is different from the main component.
A method for producing an electron emission element, comprising the steps of:
- forming a first conductive electrode;
- bringing halogen ions or halogen radicals into contact with a surface of the first conductive electrode, thereby forming irregularities;
- and
- sequentially forming a first semiconductor layer, a second semiconductor layer, an insulating layer, and a second conductive electrode on the surface of the first conductive electrode.
A method for producing an electron emission element, comprising the steps of:
- forming a first conductive electrode;
- decomposing a mixture gas by glow discharge, the mixture gas being obtained by diluting gas containing silicon atoms with a ten fold or more volume ratio of hydrogen gas, thereby sequentially forming a first semiconductor layer and a second semiconductor layer on a surface of the first conductive electrode;
- and
- sequentially forming an insulating layer and a second conductive electrode on a surface of the second semiconductor layer.
A method for producing an electron emission element, comprising the steps of:
- sequentially forming a first conductive electrode, a first semiconductor layer, and a second semiconductor layer;
- bringing halogen ions or halogen radicals into contact with a surface of the first semiconductor layer or the second semiconductor layer, thereby forming irregularities;
- and
- sequentially forming an insulating layer and a second conductive electrode on the surface of the second semiconductor layer.
A method for producing an electron emission element, comprising the steps of:
- sequentially forming a first conductive electrode, a first semiconductor layer, and a second semiconductor layer;
- heating the first and second semiconductor layers, thereby growing microcrystals at least in the second semiconductor layer;
- and
- sequentially forming an insulating layer and a second conductive electrode on a surface of the second semiconductor layer.
Dependencies are inferred from the claim text.