Solar cell and manufacturing method thereof
AssigneeAsahi Kasei Kabushiki Kaisha
InventorsHidenobu Nakazawa, Takayuki Watanabe
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Abstract
A solar cell having a semiconductor layer of a chalcopyrite structure as a light absorption layer and using a flexible film as a substrate, breakdown and peeling caused to the semiconductor layer of the chalcopyrite structure due to warp of the flexible film upon heat treatment is prevented. To realize this, a poly(phenylene terephthalmide) film having a coefficient of heat expansion of 5.0×10−6/° C. is used as a substrate (1). After a Ti reinforcing layer (6) is disposed on the entire back surface of this substrate (1), a first electrode layer (2) is disposed on the front surface of this substrate (1), and a p-type semiconductor layer (3) of a chalcopyrite structure is formed as a light absorption layer on the surface of the first electrode layer (2).
Claims11
A solar cell having a semiconductor layer of a chalcopyrite structure as a light absorption layer on the front surface of a substrate comprising a flexible film, which has
- a thin film at a thickness of from 0.5 times to 5 times the thickness of the semiconductor layer of the chalcopyrite structure, having an average value of a linear expansion coefficient in the range of 30° C. to 300° C. of from 3×10−6/° C. to 20×10−6/° C., having a high corrosion resistance to an atmosphere of hydrogen selenide or an atmosphere of hydrogen sulfide, and formed to a substrate before the formation of the semiconductor layer of the chalcopyrite structure, as a reinforcing layer on the back surface of the substrate.
Dependencies are inferred from the claim text.