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AssigneeKYOCERA Corporation
InventorsMikaki Shinji, Hamashima Hiroshi, Iwasaki Koichi, Iwamoto Kuniharu, Nakahara Masahiro, Okumura Masahiro, Hino Shouji, Nabeshima Yutaka
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The invention provides a semiconductive zirconia sintering body able to be manufactured simply and cheaply and escape static electricity at suitable speed without greatly reducing mechanical characteristics of zirconia. 10 to 40 weight % of one kind or more of oxides of Fe, Co, Ni and Cr as conductivity giving agents is included with respect to 60 to 90 weight % of ZrO2 including a stabilizing agent so that a semiconductive zirconia sintering body having a volume specific resistance value from 105 to 109 Ω·cm is formed.
A semiconductive zirconia body formed under oxidative conditions, comprising 60 to 90 weight % of ZrO2 including stabilizing agent, said zirconia body having no more than 2% by weight Al2O3, containing greater than 10 weight % to 40 weight % of one kind or more of oxides of Fe, Co, Ni, and Cr as conductivity giving agents, having a three-point flexural strength of at least 580 Mpa, and having a volume specific resistance of 106 to 109 Ω·cm.
Dependencies are inferred from the claim text.