Process for manufacturing interlayer insulating film and display apparatus using this film and its manufacturing method
AssigneeCanon Kabushiki Kaisha
InventorsSeiji Kamei, Katsumi Kurematsu, Osamu Koyama
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Abstract
In a process for forming an interlayer insulating film using an SOG film, a process for manufacturing an interlayer insulating film comprising the steps of irradiating a first inorganic SOG film with ultraviolet light in an atmosphere containing oxygen components to generate ozone and active oxygen atoms in order to irradiate the SOG film with the atoms, and further forming a second inorganic SOG film thereon.
Claims20
A process for forming an interlayer insulating film using an SOG film, said process comprising the steps of:
- forming a first inorganic SOG film having a thickness in the range between 50 nm and 400 nm, on a substrate;
- irradiating the first inorganic SOG film with ultraviolet light in an atmosphere containing oxygen components to generate ozone and active oxygen atoms in order to irradiate the SOG film with the atoms;
- and
- further forming a second inorganic SOG film, having a thickness in the range between 50 nm and 400 nm, thereon.
A process for forming an interlayer insulating film using an SOG film, said process comprising the steps of:
- forming a first inorganic SOG film having a thickness in the range between 50 nm and 400 nm, on a substrate;
- irradiating the first inorganic SOG film with O2 plasma;
- and
- further forming a second inorganic SOG film having a thickness in the range between 50 nm and 400 nm, thereon.
A process for forming an interlayer insulating film using an SOG film, said process comprising the steps of:
- forming a first inorganic SOG film having a thickness in the range between 50 nm and 400 nm, on a substrate;
- irradiating the first inorganic SOG film with O2 plasma;
- and
- further forming a second inorganic SOG film having a thickness in the range between 50 nm and 400 nm, thereon to reduce or eliminate steps or voids on an element separation and an element formation regions.
A process for forming an interlayer insulating film for a semiconductor device, said process comprising repeating a step of forming an insulating film on a metal wiring and a step of forming an inorganic SOG film having a thickness in the range between 50 nm and 400 nm, thereon to form an interlayer insulating film consisting of a multilayer structure including the insulating films and inorganic SOG films.
A process for forming an interlayer insulating film for a semiconductor device, said process comprising forming a first insulating film on a metal wiring, forming a first inorganic SOG film having a thickness in the range between 50 nm and 400 nm, thereon, further forming a second insulating film thereon, forming a second inorganic SOG film having a thickness in the range between 50 nm and 400 nm, thereon, and further forming a third insulating film thereon to form the interlayer insulating film.
A process for forming an interlayer insulating film for a semiconductor device, said process comprising forming a first insulating film on a metal wiring, forming a first inorganic SOG film having a thickness in the range between 50 nm and 400 nm, thereon, irradiating the first SOG film with a UV light, further forming a second inorganic SOG film having a thickness in the range between 50 nm and 400 nm, thereon, forming a second insulating film thereon, further forming a third inorganic SOG film having a thickness in the range between 50 nm and 400 nm, and forming a third insulating film thereon to form the interlayer insulating film.
A process for forming an interlayer insulating film for a semiconductor device, said process comprising forming a first insulating film on a metal wiring, further forming a first inorganic SOG film having a thickness in the range between 50 nm and 400 nm, thereon, irradiating the film with SOG film with O2 plasma, forming a second inorganic SOG film having a thickness in the range between 50 nm and 400 nm, thereon again, forming a second insulating film thereon, further forming a third inorganic SOG film having a thickness in the range between 50 nm and 400 nm, and further forming a third insulating film thereon to form the interlayer insulating film.
Dependencies are inferred from the claim text.