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US 6,274,515 B1Granted
Spin-on dielectric formation process for use in manufacturing semiconductors
AssigneeMotorola, Inc.
InventorsHenry G. Hughes, Ping-Chang Lue
Life of this patent
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Abstract
A spin-on dielectric for use in manufacturing semiconductors is produced. The dielectric is a siloxane polymer wherein each silicon atom is bonded to a polarization reducing group, and to three oxygen atoms each of which is bonded to one other silicon atom.
Claims11
A method of forming a dielectric layer on a semiconductor wafer comprising:
- providing a semiconductor wafer having a surface;
- forming a mixture by combining ingredients consisting essentially of an organosilane compound having an aromatic group on every silicon atom, a solvent, a catalyst, and water;
- and
- forming the dielectric layer on the surface of the semiconductor wafer by curing the mixture on the surface so that the mixture forms a siloxane polymer having an aromatic group attached to every silicon atom of the polymer.
1 more element
A method of providing a dielectric on a semiconductor wafer comprising:
- providing a semiconductor wafer;
- and
- forming a dielectric layer on the semiconductor wafer wherein the dielectric is a siloxane polymer and wherein each silicon atom in the polymer has a single aromatic group attached to it.
A method of providing a dielectric on a semiconductor wafer comprising:
- providing a semiconductor wafer;
- and
- forming a dielectric layer having a dielectric constant no greater than approximately 2.4 on the semiconductor wafer wherein the dielectric is a siloxane polymer and wherein each silicon atom in the polymer has a group selected from the aromatic family attached to it.
Dependencies are inferred from the claim text.