Method of oxidizing a nitride film on a conductive substrate

A method of defining patters on a nitride film comprising the steps of:

• providing a conductive substrate;
• forming a nitride film on the main surface of said conducive substrate;
• providing an electrode terminal, and generating an electric field between said electrode terminal and said conductive substrate for passing through said nitride film;
• moving the relative positions of said electrode terminal and said conductive substrate corresponding to a specific pattern, thereby oxidizing one portion of said nitride film and transferring said specific pattern to said nitride film.

A method of fabricating memory media, the memory media using the arrangement of a plurality of etching holes formed on a conductive substrate for recording information, the method comprising the steps of:

• providing an electrode terminal;
• forming a nitride film on the main surface of said conductive substrate;
• generating an electric field between said electrode terminal and said conductive substrate, wherein said electric field passes through said nitride film;
• moving the relative positions of said electrode terminal and said conductive substrate corresponding to a predetermined arrangement of etching holes, thereby forming a plurality of oxidizing regions on said nitride film;
• removing said oxidizing regions in said nitride film to form a plurality of etching holes in said nitride film, deep into said conductive substrate, for recording information;
• removing the remaining nitride film;
• conformally forming a film with high reflectivity on said conductive substrate.

A method of performing chemical selective formation processes on a conductive substrate comprising the steps of:

• providing a conductive substrate;
• forming a nitride film on the main surface of said conductive substrate;
• providing an electrode terminal, and generating an electric field between said electrode terminal and said conductive substrate, wherein said electric field passes through said nitride film, thereby oxidizing said nitride film passed by said electric field;
• selectively removing the oxidized portion of said nitride film or the unoxidized portion of said nitride filed film;
• carrying out chemical selective formation processes.