Method for manufacturing semiconductor device
AssigneeSharp Kabushiki Kaisha
InventorYoshihide Suzuki
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Abstract
A method for manufacturing a semiconductor device includes the steps of: forming an interlayer dielectric film on a silicon substrate having a diffusion layer formed in one-side surface thereof; forming at least one contact hole in the interlayer dielectric film; forming a first high melting-point metal film and a first high melting-point metal nitride film on the surface of the contact hole in this order as a barrier metal; thermal treatment for improvement of a barrier property of the first high-melting point metal nitride film; and forming a second high melting-point metal nitride film, a second high melting-point metal film, and an aluminum-containing wiring film to fill the contact hole in this order in the same atmosphere.
Claims12
A method for manufacturing a semiconductor device comprising the steps of:
- forming an interlayer dielectric film on a silicon substrate having a diffusion layer formed in a surface thereof;
- forming at least one contact hole in the interlayer dielectric film;
- forming a first high melting-point metal film and a first high melting-point metal nitride film on the surface of the contact hole in this order as a barrier metal;
- thermally treating the first metal nitride film in an atmosphere including oxygen for improvement of a barrier property of the first high-melting point metal nitride film;
- and
- forming a second high melting-point metal nitride film, a second high melting-point metal film, and an aluminum-containing wiring film to fill the contact hole in this order in the same atmosphere without exposure to ambient air.
Dependencies are inferred from the claim text.