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US 6,274,476 B1Granted
Semiconductor device and method of manufacturing the same
AssigneeNEC Corporation
InventorsNoriaki Oda, Kiyotaka Imai
Life of this patent
Estimating the term…
Abstract
In a semiconductor device having a multilayer metallization structure using SiOF film as an interlayer insulating film, with respect to the interlayer insulating film, the fluorine concentration of SiOF films (11, 16) in a wiring gap portion in the same layer wiring is set to be higher than the fluorine concentration of SiOF films (12, 17) between the upper and lower layer wirings (8, 15; 15, 20).
Claims10
A semiconductor device manufacturing method, comprising:
- a step of forming a plurality of wirings on a plane;
- a step of forming a first insulating film of SiOF on the plane having the wirings formed thereon, wherein a gap portion of the wirings is perfectly filled with SiOF film and the first insulating film forms a triangular surface on the wirings, and removing a first portion of the first insulating film on the upper surface of the wirings;
- a step of introducing fluorine into a second portion of the first insulating film remaining at a wiring gap portion;
- and
- a step of forming a second insulating film of SiOF.
2 more elements
A semiconductor device manufacturing method, comprising:
- a step of forming a plurality of wirings on a plane;
- a step of forming a first insulating film of SiOF on the plane having the wirings formed thereon, wherein a gap portion of the wirings is perfectly filled with SiOF film and the first insulating film forms a triangular surface on the wirings, and introducing fluorine into the first insulating film;
- a step of removing the first insulating film on the upper surface of the wirings;
- and
- a step of forming a second insulating film of SiOF.
2 more elements
Dependencies are inferred from the claim text.