Tungsten interconnect method

Abstract

A tungsten gate electrode and method of fabricating the same are provided. In one aspect, a method of fabricating a circuit device in an opening in an insulating film on a substrate is provided. The method includes depositing a film of amorphous silicon and amorphous tungsten in the opening, and thereafter depositing a film of polycrystalline tungsten on the film and annealing the substrate to react the amorphous silicon with the amorphous tungsten to form tungsten silicide on the insulating film and to increase the grain structure of the polycrystalline tungsten film. The tungsten silicide film and the polycrystalline tungsten film may be planarized to the insulating film. The method enables the seamless fabrication of an adhesion layer and a tungsten conductor structure in a single chamber and without resort to titanium.

Dependencies are inferred from the claim text.